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Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC327-40,116 by NXP Semiconductors

BC327-40,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

80 MHz

.7 V

BC337,112 by NXP Semiconductors

BC337,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN

WIRE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC337-16,112 by NXP Semiconductors

BC337-16,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN

WIRE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC337-16,126 by NXP Semiconductors

BC337-16,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

.5 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

BC337-25,112 by NXP Semiconductors

BC337-25,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

160

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC337-25,116 by NXP Semiconductors

BC337-25,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC337-25,126 by NXP Semiconductors

BC337-25,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

.5 A

45 V

SINGLE

160

TO-92

O-PBCY-T3

e3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

BC337-40,116 by NXP Semiconductors

BC337-40,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.7 V

BC368,112 by NXP Semiconductors

BC368,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

40 pF

20 V

SINGLE

85

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

170 MHz

.5 V

BC369,112 by NXP Semiconductors

BC369,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

20 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

140 MHz

BC517,112 by NXP Semiconductors

BC517,112

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;

.5 A

30 V

DARLINGTON

30000

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

220 MHz

1 V

BC517,116 by NXP Semiconductors

BC517,116

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 220 MHz; Maximum Collector Current (IC): .5 A; Maximum VCEsat: 1 V;

.5 A

30 V

DARLINGTON

30000

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

220 MHz

1 V

BC546B,116 by NXP Semiconductors

BC546B,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC546B,126 by NXP Semiconductors

BC546B,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.6 V

BC547,116 by NXP Semiconductors

BC547,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

110

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC547B,112 by NXP Semiconductors

BC547B,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.6 V

BC547B,116 by NXP Semiconductors

BC547B,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC547C,112 by NXP Semiconductors

BC547C,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC547C,116 by NXP Semiconductors

BC547C,116

NXP Semiconductors

NXP Semiconductors' BC547C,116 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. Its package style is cylindrical with matte tin finish in a through-hole terminal form.

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC547C,126 by NXP Semiconductors

BC547C,126

NXP Semiconductors

BC547C,126 by NXP Semiconductors is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. Its package style is cylindrical with matte tin finish in through-hole terminal form.

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC549C,112 by NXP Semiconductors

BC549C,112

NXP Semiconductors

BC549C,112 by NXP Semiconductors is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. Its package is cylindrical with through-hole terminals.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

.6 V

BC550C,112 by NXP Semiconductors

BC550C,112

NXP Semiconductors

NXP Semiconductors' BC550C,112 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. With a cylindrical package style, it features matte tin terminal finish in a through-hole configuration.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

.6 V

BC550C,116 by NXP Semiconductors

BC550C,116

NXP Semiconductors

NXP Semiconductors' BC550C,116 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. The package is cylindrical with matte tin finish and through-hole terminals.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

.6 V

BC556A,112 by NXP Semiconductors

BC556A,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

125

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC556B,112 by NXP Semiconductors

BC556B,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

220

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC556B,116 by NXP Semiconductors

BC556B,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

PNP

.625 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.65 V

BC557,112 by NXP Semiconductors

BC557,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

125

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.65 V

BC557,116 by NXP Semiconductors

BC557,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

125

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC557B,112 by NXP Semiconductors

BC557B,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

220

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

PNP

.5 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.65 V

BC557B,116 by NXP Semiconductors

BC557B,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC557B,126 by NXP Semiconductors

BC557B,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

220

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC557C,112 by NXP Semiconductors

BC557C,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC557C,126 by NXP Semiconductors

BC557C,126

NXP Semiconductors

BC557C,126 by NXP Semiconductors is a PNP BJT transistor with hFE of 420 and VCE of 45V. It is commonly used for switching applications due to its max IC of 0.1A and fT of 100MHz. The transistor comes in a cylindrical package with three terminals and silicon element material.

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

BC559C,116 by NXP Semiconductors

BC559C,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): CYLINDRICAL;

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

Not Qualified

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

.65 V

BC635,112 by NXP Semiconductors

BC635,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

45 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

180 MHz

.5 V

BC635,116 by NXP Semiconductors

BC635,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

45 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

180 MHz

.5 V

BC638,112 by NXP Semiconductors

BC638,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

60 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BC638,116 by NXP Semiconductors

BC638,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

60 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BC639,112 by NXP Semiconductors

BC639,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

180 MHz

.5 V

BC639,116 by NXP Semiconductors

BC639,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

180 MHz

.5 V

BC639,126 by NXP Semiconductors

BC639,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SILICON

130 MHz

.5 V

BC640,112 by NXP Semiconductors

BC640,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

63

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BC640,116 by NXP Semiconductors

BC640,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 145 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

63

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

145 MHz

.5 V

BC640,126 by NXP Semiconductors

BC640,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

1 A

80 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

.5 V

BC846AT,115 by NXP Semiconductors

BC846AT,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC846BT,115 by NXP Semiconductors

BC846BT,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC856AT,115 by NXP Semiconductors

BC856AT,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

125

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC857AT,115 by NXP Semiconductors

BC857AT,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

SINGLE

125

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz