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BC550C,112

NXP Semiconductors

BC550C,112 by NXP Semiconductors

NXP Semiconductors' BC550C,112 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. With a cylindrical package style, it features matte tin terminal finish in a through-hole configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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VNN

France . 5,935 parts In-Stock

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Vyrian

USA . 4,605 parts In-Stock

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Anansix

USA . 2,266 parts In-Stock

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J2 Sourcing AB

Sweden . 1,000 parts In-Stock

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Digiode

USA . 826 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Ampacity Inc.

Singapore . 971 parts In-Stock

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$13.050

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AZTECH Wire

Italy . 245 parts In-Stock

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One Stop Electronics

USA . 1,347 parts In-Stock

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$38.050

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UNI Independent Distributors

Spain . 8,310 parts In-Stock

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Continental Prestige Electronics

USA . 4,970 parts In-Stock

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Microchip USA

USA . 4,713 parts In-Stock

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Corphita

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CPlus Electronics

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Argo Parts USA

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Upgrade your electronic projects with the BC550C,112 by NXP Semiconductors. This small signal bipolar junction transistor offers high-quality performance and reliability for amplifier applications. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 420, this NPN transistor delivers superior functionality. Its cylindrical package shape and matte tin terminal finish make it easy to integrate into your designs. Trust NXP Semiconductors for cutting-edge technology that brings value and efficiency to your projects. Elevate your creations with the BC550C,112 today.

Feature Benefit Bullets

Package Body Material: METAL

The metal body provides durability and efficient heat dissipation, ensuring reliability and longevity of the power supply module.

Approvals (V): CB, CE, EAC, EN, IEC, UKCA, UL

Having multiple approvals ensures that the power supply module meets international safety and quality standards, giving peace of mind to users.

Main Output Efficiency: 90 %

High efficiency of 90% helps in reducing energy wastage and keeps operating costs low.

Nominal Output Voltage: 48 V

Stable output voltage of 48V ensures compatibility with a wide range of devices and applications.

Protection(s): OVER CURRENT; OVER VOLTAGE; OVER TEMPERATURE; SHORT CIRCUIT

Multiple protection features ensure the safety of connected devices and the power supply module itself, preventing damage in case of faults or abnormal conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC550C,112 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC550C,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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