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BC547C,126

NXP Semiconductors

BC547C,126 by NXP Semiconductors

BC547C,126 by NXP Semiconductors is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. Its package style is cylindrical with matte tin finish in through-hole terminal form.

Median Price

$0.435

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 300 parts In-Stock

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$0.435

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$0.431

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300

$0.435

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Distributors (In-Stock)

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Digiode

USA . 3,721 parts In-Stock

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$0.413

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Vyrian

USA . 7,281 parts In-Stock

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VNN

France . 3,593 parts In-Stock

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Anansix

USA . 302 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 300 parts In-Stock

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$0.370

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Corphita

USA . 2,170 parts In-Stock

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$0.392

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Aztec Data Supply Inc.

USA . 1,639 parts In-Stock

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$0.429

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1,639

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$0.435

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$0.431

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$0.413

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300

$0.435

$0.431

$0.413

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Corohmni

South Africa . 434 parts In-Stock

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$0.514

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434

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AZTECH Wire

Italy . 398 parts In-Stock

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$5.803

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UNI Independent Distributors

Spain . 7,215 parts In-Stock

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Continental Prestige Electronics

USA . 4,897 parts In-Stock

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Argo Parts USA

USA . 3,702 parts In-Stock

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Microchip USA

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Looking for a reliable solution for your switching applications? Look no further than the BC547C,126 by NXP Semiconductors. As a leader in semiconductor technology, NXP delivers top-quality small signal bipolar junction transistors that offer exceptional performance and reliability. With a maximum VCEsat of 0.6V and a minimum DC current gain of 420, this NPN transistor is perfect for a wide range of switching tasks. Trust NXP to provide you with the value, benefits, and advantages you need for your next project. Upgrade to the BC547C,126 today and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

Allows for efficient current flow and operation in a wide range of applications, including amplification and switching.

Configuration: SINGLE

Simplified design and ease of use in circuits, making it suitable for basic switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and reliable switching operations.

Maximum VCEsat: 0.6 V

Low saturation voltage helps in reducing power dissipation and improving efficiency in switching operations.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Easy to solder and install on PCBs, providing a secure connection for reliable performance.

No. of Terminals: 3

Simple and straightforward connection setup, making it easy to integrate into circuits.

Maximum Power Dissipation (Abs): 0.625 W

Ability to handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): CYLINDRICAL

Stable and secure mounting, suitable for various applications in electronic devices.

Minimum DC Current Gain (hFE): 420

High current gain ensures amplification of weak signals and stable operation in different circuit configurations.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments, providing reliability under varying temperature conditions.

Maximum Collector-Emitter Voltage: 45 V

Suitable for low to medium voltage applications, ensuring safe and reliable operation.

Transistor Element Material: SILICON

Highly reliable and widely used material for transistor manufacturing, ensuring consistent performance and durability.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels in various applications, ensuring efficient operation without overheating.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for secure connections and long-term reliability in circuit applications.

Terminal Position: BOTTOM

Clear and organized terminal layout for easy connection and integration into circuit designs.

Nominal Transition Frequency (fT): 100 MHz

Capable of high-speed switching operations, making it suitable for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC547C,126 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC547C,126 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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