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BC547C,116

NXP Semiconductors

BC547C,116 by NXP Semiconductors

NXP Semiconductors' BC547C,116 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. Its package style is cylindrical with matte tin finish in a through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Digiode

USA . 4,860 parts In-Stock

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VNN

France . 4,482 parts In-Stock

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Vyrian

USA . 3,942 parts In-Stock

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Anansix

USA . 2,465 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Advanced Electronics

New Zealand . 850 parts In-Stock

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$1.415

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$1.401

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$1.344

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AZTECH Wire

Italy . 428 parts In-Stock

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$17.069

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Ampacity Inc.

Singapore . 1,442 parts In-Stock

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$18.050

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One Stop Electronics

USA . 1,504 parts In-Stock

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$64.050

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UNI Independent Distributors

Spain . 6,525 parts In-Stock

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Corphita

USA . 4,676 parts In-Stock

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Argo Parts USA

USA . 4,185 parts In-Stock

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Microchip USA

USA . 4,110 parts In-Stock

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Continental Prestige Electronics

USA . 1,688 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Upgrade your electronic projects with the BC547C,116 by NXP Semiconductors. Known for their top-quality manufacturing, NXP Semiconductors delivers reliable Small Signal Bipolar Junction Transistors that are perfect for switching applications. With a high DC current gain of 420 and a low VCEsat of 0.6V, this NPN transistor offers exceptional performance in a compact package. Whether you're a hobbyist or a professional, the BC547C,116 provides value, efficiency, and versatility for all your circuit design needs. Experience the difference with NXP Semiconductors' trusted technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for various circuit designs.

Maximum VCEsat: 0.6 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to efficient switching operations with low power dissipation.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high maximum power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 420

High DC current gain ensures reliable amplification and switching performance, making this transistor suitable for various applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suiting it for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 45 V

Can withstand relatively high voltage levels, making it suitable for circuits requiring higher voltage handling capabilities.

Nominal Transition Frequency (fT): 100 MHz

High fT value indicates good high-frequency performance, enabling this transistor to be used in applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC547C,116 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC547C,116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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