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BC549C,112

NXP Semiconductors

BC549C,112 by NXP Semiconductors

BC549C,112 by NXP Semiconductors is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. Its package is cylindrical with through-hole terminals.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 10,586 parts In-Stock

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Digiode

USA . 4,173 parts In-Stock

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Anansix

USA . 1,382 parts In-Stock

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VNN

France . 770 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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One Stop Electronics

USA . 780 parts In-Stock

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$9.050

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AZTECH Wire

Italy . 608 parts In-Stock

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Ampacity Inc.

Singapore . 773 parts In-Stock

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Argo Parts USA

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UNI Independent Distributors

Spain . 2,724 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 500 parts In-Stock

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Continental Prestige Electronics

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Overview

Elevate your amplifier designs with the BC549C,112 by NXP Semiconductors. Crafted with precision and expertise, this NPN transistor offers exceptional performance in a compact package. Ideal for a wide range of applications, this small signal BJT delivers high reliability and efficiency. With a minimum DC current gain of 420 and maximum VCEsat of 0.6V, this transistor ensures optimal functionality. Trust NXP Semiconductors to provide you with quality components that exceed expectations. Upgrade your projects with the BC549C,112 and experience unparalleled value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability in various operating conditions.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

Simplified design and easier integration into circuits, reducing complexity and potential points of failure.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensures optimal performance in audio and other signal amplification applications.

Maximum VCEsat: 0.6 V

Low saturation voltage minimizes power loss and improves efficiency of the amplifier circuit.

Package Shape: ROUND

Compact and space-efficient design, suitable for applications where size constraints are a concern.

Terminal Form: THROUGH-HOLE

Simplifies the assembly process and provides a secure connection to the circuit board.

No. of Terminals: 3

Provides necessary connections for biasing and signal input/output, ensuring proper functionality in the circuit.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels without overheating, making it suitable for various amplification tasks.

Package Style (Meter): CYLINDRICAL

Easy to handle and mount in circuits, ensuring convenience during the manufacturing process.

Minimum DC Current Gain (hFE): 420

Ensures stable and consistent amplification performance, delivering reliable results in various applications.

Maximum Operating Temperature: 150 °C

Can operate at elevated temperatures without degradation in performance, suitable for applications with demanding temperature requirements.

Maximum Collector-Emitter Voltage: 30 V

Can handle high voltage levels, suitable for applications where higher voltages are present in the circuit.

Transistor Element Material: SILICON

Provides stable and reliable performance over a wide temperature range, ensuring consistent operation in various environments.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for various amplification tasks without risk of damage.

Terminal Finish: TIN

Provides a reliable and corrosion-resistant connection, ensuring long-term performance of the transistor in the circuit.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering onto circuit boards, ensuring a secure connection and simplified assembly process.

Nominal Transition Frequency (fT): 100 MHz

Capable of amplifying higher frequency signals with minimal distortion, making it suitable for audio and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC549C,112 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC549C,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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