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BC550C,116

NXP Semiconductors

BC550C,116 by NXP Semiconductors

NXP Semiconductors' BC550C,116 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. The package is cylindrical with matte tin finish and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 10,468 parts In-Stock

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VNN

France . 483 parts In-Stock

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483

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Digiode

USA . 480 parts In-Stock

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480

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Anansix

USA . 236 parts In-Stock

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Nova Conductors

Japan . 76 parts In-Stock

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Advanced Electronics

New Zealand . 2,655 parts In-Stock

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$0.939

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$0.929

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$0.892

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One Stop Electronics

USA . 1,485 parts In-Stock

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$2.050

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Ampacity Inc.

Singapore . 1,236 parts In-Stock

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AZTECH Wire

Italy . 723 parts In-Stock

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$19.514

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UNI Independent Distributors

Spain . 7,472 parts In-Stock

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Microchip USA

USA . 4,825 parts In-Stock

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CPlus Electronics

USA . 4,000 parts In-Stock

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Corphita

USA . 3,798 parts In-Stock

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Continental Prestige Electronics

USA . 3,297 parts In-Stock

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Argo Parts USA

USA . 3,222 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Upgrade your electronic projects with the BC550C,116 by NXP Semiconductors - a top-of-the-line Small Signal Bipolar Junction Transistor. Boasting high-quality construction and reliable performance, this NPN transistor is perfect for amplifiers and other applications. With a low VCEsat of 0.6V and a DC current gain of 420, this transistor delivers superior power dissipation and efficiency. Trust NXP Semiconductors to provide you with the best components for your next project. Experience the value and benefits of the BC550C,116 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration and compatibility with other NPN components in a circuit, providing flexibility for design and implementation.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use for amplification purposes.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Maximum VCEsat: 0.6 V

Low VCEsat ensures minimal power loss and high efficiency in the transistor's operation, making it suitable for low power applications.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circuits, offering convenience during assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and stability in the circuit board, ensuring reliable performance and durability.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, the transistor can handle relatively high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and efficient use of space in the circuit layout, ideal for applications with limited space.

Minimum DC Current Gain (hFE): 420

The high minimum DC current gain ensures amplification of input signals with minimal distortion, providing accurate and reliable signal amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures without performance degradation, ensuring reliable operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating provides flexibility in circuit design and ensures safe operation under different voltage conditions.

Transistor Element Material: SILICON

The silicon material used in the transistor element offers high performance and reliability, making it suitable for demanding applications requiring precision and stability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, the transistor can handle moderate current levels, making it suitable for various amplification and switching applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and reliable electrical connections, ensuring long-term performance and durability.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy mounting and soldering on circuit boards, making it convenient for assembly and integration in electronic systems.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency allows for fast switching speeds and high-frequency operation, making the transistor suitable for applications requiring rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC550C,116 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC550C,116 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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