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UMF6NTR

ROHM

UMF6NTR by ROHM

ROHM's UMF6NTR is a PNP BJT transistor with 270 min hFE, 260 MHz fT, and 0.5 A IC. Ideal for switching applications, it has a max operating temperature of 150°C and a package style of small outline.

Median Price

$0.123

Lifecycle Status

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3

In-Stock Inventory

1k+

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Nova Conductors

Japan . 10 parts In-Stock

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$0.123

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Vyrian

USA . 3,930 parts In-Stock

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Electronics Depot

USA . 2,975 parts In-Stock

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Bastille Electronics

Australia . 82 parts In-Stock

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$0.123

100+ parts

$0.117

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$0.111

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$0.109

82

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$0.109

AZTECH Wire

Italy . 834 parts In-Stock

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$8.537

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Ampacity Inc.

Singapore . 1,079 parts In-Stock

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$53.050

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Authorized Procurement Solutions

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Kepictronics

USA . 5,120 parts In-Stock

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Overview

Discover the power of seamless switching with the ROHM UMF6NTR Small Signal Bipolar Junction Transistor. Crafted by the renowned manufacturer, ROHM, this PNP transistor offers unparalleled quality and reliability. Whether you're looking to enhance your electronic projects or streamline your circuit designs, this versatile component is the perfect choice. With its built-in FET and diode, high current gain, and compact design, the UMF6NTR delivers exceptional performance in a wide range of applications. Upgrade your projects today and experience the unmatched value and benefits that this top-of-the-line transistor has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and gives the transistor protection from external elements, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into PNP circuits, offering flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The built-in FET and diode provide additional functionality and versatility in circuit design, reducing the need for external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high speed and efficiency in electronic switching circuits.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on PCBs, saving space and enabling mass production.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on the PCB, optimizing the layout of components.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and connection, ensuring a reliable electrical connection in the circuit.

No. of Terminals: 6

Having 6 terminals provides additional functionalities and flexibility in circuit design, allowing for more complex circuits to be implemented.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels, making it suitable for a variety of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact designs and applications with size constraints.

Minimum DC Current Gain (hFE): 270

The high minimum DC current gain ensures stable and reliable amplification, making this transistor suitable for amplification circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 12 V

The high maximum collector-emitter voltage of 12 V allows for operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring high performance and stability in the transistor.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels, making it suitable for various circuit applications.

Terminal Finish: TIN COPPER

The tin copper terminal finish provides good conductivity and solderability, ensuring a reliable electrical connection in the circuit.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit design and provides options for different connection configurations.

Nominal Transition Frequency (fT): 260 MHz

With a high nominal transition frequency of 260 MHz, this transistor is capable of high-speed signal switching and amplification, making it ideal for applications requiring high frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMF6NTR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT IN 2SA2018 AND 2SK3019

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Minimum DC Current Gain (hFE):

270

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

UMF6NTR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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