Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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2SB1216S-H
Onsemi
The Onsemi 2SB1216S-H is a PNP BJT transistor with max. power dissipation of 20W, hFE of 140, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 130MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.
COLLECTOR
4 A
100 V
SINGLE
140
TO-251
R-PSIP-T3
e6
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
PNP
20 W
Other Transistors
NO
TIN BISMUTH
THROUGH-HOLE
SWITCHING
SILICON
130 MHz
2SB1216T-E
The Onsemi 2SB1216T-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150 °C operating temperature. Its package style is in-line, making it suitable for through-hole mounting in various electronic circuits.
200
2SB1216T-TL-E
2SB1216T-TL-E by Onsemi is a PNP BJT transistor with 100V VCEO, 4A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 20W in a small outline package. With Gull Wing terminals and TIN BISMUTH finish, it operates up to 150 °C.
TO-252
R-PSSO-G2
2
SMALL OUTLINE
YES
GULL WING
2SD1816S-E
The Onsemi 2SD1816S-E is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. The package style is in-line with through-hole terminals, making it suitable for high-power dissipation up to 20W in various electronic circuits.
NPN
180 MHz
2SD1816S-H
Onsemi's 2SD1816S-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. current of 4A. It has a min. DC current gain of 140, making it suitable for switching applications up to 20W power dissipation at 150°C. The through-hole package style with tin bismuth finish is ideal for various electronic designs requiring high-speed performance at a nominal transition frequency of 180MHz.
2SD1816S-TL-H
Onsemi's 2SD1816S-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. This small outline package has a transition frequency of 180MHz, making it suitable for high-speed switching circuits.
260
30
2SD1816T-E
2SD1816T-E by Onsemi is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its single configuration and high transition frequency of 180MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.
2SD1816T-H
Onsemi's 2SD1816T-H is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 180MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.
2SD1816T-TL-H
Onsemi's 2SD1816T-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150°C operating temperature. Its small outline package and high transition frequency of 180MHz make it suitable for compact electronic designs requiring fast signal processing.
Tin/Bismuth (Sn/Bi)
DDC114YUQ-13-F
Diodes Incorporated
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
68
R-PDSO-G6
e3
6
-55 Cel
.2 W
AEC-Q101
MATTE TIN
DUAL
250 MHz
DDTC115EUAQ-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON;
BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY
.02 A
SINGLE WITH BUILT-IN RESISTOR
82
R-PDSO-G3
BC818K16WH6327XTSA1
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
.5 A
25 V
100
TIN
AMPLIFIER
170 MHz
BC818K40E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
250
BC847BL3E6327XTMA1
BC847BL3E6327XTMA1 by Infineon Technologies is a NPN BJT with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, this surface-mount transistor in chip carrier package offers a max collector current of 0.1A.
LOW NOISE
45 V
R-XBCC-N3
e4
UNSPECIFIED
CHIP CARRIER
GOLD
NO LEAD
BOTTOM
BC848CWH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
30 V
420
BC850CWH6327XTSA1
BC850CWH6327XTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 420, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it has GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.
BC857BWH6327XTSA1
BC857BWH6327XTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package style. Suitable for surface mount assembly with dual terminals and AEC-Q101 compliance.
220
BC857CWH6327XTSA1
BC857CWH6327XTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 420, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package suitable for surface mount technology.
BC858BWH6327XTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;
BC860CWH6327XTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: LOW NOISE;
BCR112WH6327XTSA1
BCR112WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, DC current gain of 20, and max collector current of 0.1A. This surface mount transistor in small outline package is made of silicon and operates at a nominal transition frequency of 140MHz.
BUILT-IN BIAS RESISTOR RATIO IS 1
20
140 MHz
BCR116SH6327XTSA1
BCR116SH6327XTSA1 by Infineon is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, ideal for switching applications. With a min hFE of 70 and fT of 150MHz, it offers efficient performance in small outline packages for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO 10
70
150 MHz
BCR116WH6327XTSA1
BCR116WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a hFE of 70, Vce(max) of 50V, and fT of 150MHz. This small outline transistor is surface mountable with Gull Wing terminals, ideal for compact electronic designs.
BCR148SH6327XTSA1
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70;
BUILT IN BIAS RESISTOR RATIO IS 1
100 MHz
BCR198SH6327XTSA1
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
BUILT IN BIAS RESISTANCE RATIO IS 1
190 MHz
BCP5216E6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
1 A
60 V
R-PDSO-G4
4
NOT SPECIFIED
2 W
125 MHz
BCP5310E6327HTSA1
80 V
63
BCR119WH6327XTSA1
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120;
BUILT-IN BIAS RESISTOR
120
BCR158WH6327XTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
BUILT-IN BIAS RESISTOR RATIO IS 21.36
200 MHz
BCR169WH6327XTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
BCR191WH6327XTSA1
BCR191WH6327XTSA1 by Infineon Technologies is a PNP BJT with built-in resistor for switching applications. It has a hFE of 50, VCE of 50V, and fT of 200MHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BUILT-IN BIAS RESISTOR RATIO 1
50
BCR192WH6327XTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
BUILT-IN BIAS RESISTOR RATIO IS 2.14
BCR48PNH6327XTSA1
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .07 A; Transistor Application: SWITCHING;
.07 A
NPN AND PNP
BCR573E6327HTSA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO 0.1;
BUILT-IN BIAS RESISTOR RATIO 0.1
BCW66KGE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR;
.8 A
40
BCX5616E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;
R-PSSO-F3
FLAT
BCX6810E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;
20 V
85
3 W
BCX6816E6327HTSA1
BCX6825E6327HTSA1
160
BFN39E6327HTSA1
Infineon's BFN39E6327HTSA1 is a PNP BJT transistor with 300V VCE, 0.2A IC, and 100MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package design.
.2 A
300 V
SMBT3904PNH6327XTSA1
SMBT3904PNH6327XTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max collector-emitter voltage of 40V, hFE of 30, and fT of 250MHz. With a package style of small outline and Gull Wing terminals, it's suitable for surface mount designs in various electronic circuits.
40 V
SEPARATE, 2 ELEMENTS
300 ns
70 ns
SMBT3904SH6327XTSA1
Infineon's SMBT3904SH6327XTSA1 is a NPN BJT transistor for switching applications. With hFE of 30, VCE of 40V, and fT of 300MHz, it offers fast ton of 70ns and toff of 250ns. Its Gull Wing terminals in a small outline package make it ideal for surface mount designs.
300 MHz
250 ns
SMBT3906UE6327HTSA1
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
BSR43QTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
HIGH RELIABILITY
1000 ns
2SD1815S-H
The Onsemi 2SD1815S-H is a NPN BJT with max power dissipation of 20W, hFE of 140, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and high operating temperature of 150 °C.
3 A
2SD1815S-TL-H
2SD1815S-TL-H by Onsemi is a NPN BJT with 20W power dissipation, 140 min hFE, and 150 °C max operating temp. Ideal for applications requiring a single configuration, surface mount capability, and up to 3A collector current.
2SD1815T-H
The Onsemi 2SD1815T-H is a NPN BJT with max power dissipation of 20W, min hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and operating temp up to 150 °C.
2SD1815T-TL-H
The Onsemi 2SD1815T-TL-H is a NPN BJT with max power dissipation of 20W, hFE of 200, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability. Operating temp up to 150 °C makes it suitable for various electronic devices.
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