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BCR191WH6327XTSA1

Infineon Technologies

BCR191WH6327XTSA1 by Infineon Technologies

BCR191WH6327XTSA1 by Infineon Technologies is a PNP BJT with built-in resistor for switching applications. It has a hFE of 50, VCE of 50V, and fT of 200MHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

Median Price

$0.053

Lifecycle Status

EOL

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 315,596 parts In-Stock

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-

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$0.053

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$0.044

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$0.040

315,596

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$0.053

$0.044

$0.040

DigiKey

USA . 303,000 parts In-Stock

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$0.070

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$0.070

Verical

USA . 198,000 parts In-Stock

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$0.050

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$0.050

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Digiode

USA . 144 parts In-Stock

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$0.042

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144

$0.042

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VNN

France . 27,952 parts In-Stock

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Greenchips

USA . 11,626 parts In-Stock

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Vyrian

USA . 4,259 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Corphita

USA . 568 parts In-Stock

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$0.040

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568

$0.040

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Component Stockers USA

USA . 114,971 parts In-Stock

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$0.040

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$0.040

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$0.040

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$0.040

114,971

$0.040

$0.040

$0.040

$0.040

Ampacity Inc.

Singapore . 169,429 parts In-Stock

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$0.081

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Aztec Data Supply Inc.

USA . 4,242 parts In-Stock

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$0.626

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Corohmni

South Africa . 480 parts In-Stock

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$1.287

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$1.287

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Modulus Dynamics

Lithuania . 2,752 parts In-Stock

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$1.960

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$1.882

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$1.803

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2,752

$1.960

$1.882

$1.803

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AZTECH Wire

Italy . 580 parts In-Stock

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$15.710

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Eastek

USA . 123,000 parts In-Stock

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Perfect Parts

USA . 120,960 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,833 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,736 parts In-Stock

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Overview

Unlock the power of versatile switching applications with the BCR191WH6327XTSA1 by Infineon Technologies. Crafted with precision and quality, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability. With a PNP polarity and single configuration featuring a built-in resistor, this transistor is designed for efficiency. Whether you're in need of a solution for automotive, industrial, or consumer electronics, this product's high DC current gain and maximum collector-emitter voltage of 50V ensure optimal functionality. Experience seamless integration and exceptional value with the BCR191WH6327XTSA1 - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, ideal for portable and long-lasting applications.

Polarity or Channel Type: PNP

This allows for easy integration with other PNP transistors in the circuit, providing compatibility and reliability.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and reduces the need for external components, making installation easier.

Transistor Application: SWITCHING

The transistor is specifically designed for switching applications, ensuring fast and efficient performance in high-speed circuits.

Surface Mount: YES

Being surface mount compatible, this transistor can be easily mounted on PCBs, saving space and allowing for compact designs.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to place and secure the transistor on the circuit board, ensuring a stable connection.

Terminal Form: GULL WING

The gull wing terminals provide secure connections and make soldering easier, enhancing the reliability of the transistor in the circuit.

No. of Terminals: 3

With three terminals, the transistor can be easily connected in the circuit, providing flexibility and versatility in various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact designs with limited area available.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures reliable amplification of signals, making it suitable for applications requiring consistent performance.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can handle higher voltages, providing a safety margin in the circuit.

Transistor Element Material: SILICON

The silicon material used in the transistor element ensures high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows the transistor to handle higher current loads, making it suitable for power applications.

Terminal Finish: TIN

The tin terminal finish provides a reliable and corrosion-resistant connection, ensuring long-term stability in the circuit.

Terminal Position: DUAL

The dual terminal position allows for easy installation and connection in the circuit, providing flexibility in circuit layout.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200 MHz, this transistor can handle high-frequency signals, making it suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR191WH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR191WH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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