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BCR108E6433HTMA1

Infineon Technologies

BCR108E6433HTMA1 by Infineon Technologies

Infineon BCR108E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 170MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.270

Lifecycle Status

EOL

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 34,209 parts In-Stock

1+ parts

$0.270

100+ parts

$0.118

1k+ parts

$0.053

10k+ parts

$0.035

34,209

$0.270

$0.118

$0.053

$0.035

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$2.172

100+ parts

$1.977

1k+ parts

$1.781

10k+ parts

-

500

$2.172

$1.977

$1.781

-

Verical

USA . 200,000 parts In-Stock

1+ parts

-

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Arrow

USA . 30,000 parts In-Stock

1+ parts

-

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$0.051

30,000

-

-

-

$0.051

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.079

100+ parts

-

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700

$0.079

-

-

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Digiode

USA . 732 parts In-Stock

1+ parts

$0.247

100+ parts

-

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732

$0.247

-

-

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TME

Poland . 20,000 parts In-Stock

1+ parts

-

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$0.036

20,000

-

-

-

$0.036

Vyrian

USA . 14,605 parts In-Stock

1+ parts

-

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14,605

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NAC Semi

USA . 10,000 parts In-Stock

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$0.100

10,000

-

-

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$0.100

VNN

France . 890 parts In-Stock

1+ parts

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890

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 19,073 parts In-Stock

1+ parts

$0.069

100+ parts

$0.066

1k+ parts

$0.063

10k+ parts

-

19,073

$0.069

$0.066

$0.063

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Corohmni

South Africa . 426 parts In-Stock

1+ parts

$0.069

100+ parts

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426

$0.069

-

-

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Continental Prestige Electronics

USA . 6,959 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

$0.077

6,959

$0.079

-

-

$0.077

Argo Parts USA

USA . 943 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

$0.077

943

$0.079

-

-

$0.077

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

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500

$0.079

-

-

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Semicontronic

India . 17,257 parts In-Stock

1+ parts

$0.221

100+ parts

$0.215

1k+ parts

$0.214

10k+ parts

-

17,257

$0.221

$0.215

$0.214

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Ampacity Inc.

Singapore . 16,996 parts In-Stock

1+ parts

$0.221

100+ parts

-

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16,996

$0.221

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Corphita

USA . 373 parts In-Stock

1+ parts

$0.234

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-

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373

$0.234

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Aztec Data Supply Inc.

USA . 169 parts In-Stock

1+ parts

$1.142

100+ parts

-

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-

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169

$1.142

-

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.172

100+ parts

$1.977

1k+ parts

$1.781

10k+ parts

-

500

$2.172

$1.977

$1.781

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Andel Nordic

Denmark . 3,381 parts In-Stock

1+ parts

$22.570

100+ parts

-

1k+ parts

$15.799

10k+ parts

$15.799

3,381

$22.570

-

$15.799

$15.799

Eastek

USA . 20,000 parts In-Stock

1+ parts

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$0.094

20,000

-

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-

$0.094

Component Stockers USA

USA . 18,659 parts In-Stock

1+ parts

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100+ parts

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$0.090

18,659

-

-

-

$0.090

QUARKTWIN TECHNOLOGY LTD

USA . 9,709 parts In-Stock

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9,709

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Robosynatics

Brazil . 300 parts In-Stock

1+ parts

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100+ parts

$6.271

1k+ parts

$6.271

10k+ parts

$6.271

300

-

$6.271

$6.271

$6.271

Lucentia Tech

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$6.271

1k+ parts

$6.271

10k+ parts

$6.271

300

-

$6.271

$6.271

$6.271

Overview

Enhance your electronic projects with the high-quality BCR108E6433HTMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-notch Small Signal Bipolar Junction Transistors (BJT) like this NPN transistor with built-in resistor. Ideal for switching applications, this surface-mount transistor offers reliability and efficiency in a compact package. Unlock the potential of your designs with the BCR108E6433HTMA1's impressive features and experience the seamless performance it brings to your projects. Elevate your creations today with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: NPN

The NPN configuration allows for high efficiency and low distortion in signal amplification applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it suitable for compact electronic layouts.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and reliable performance in on/off operations.

Surface Mount: YES

The surface mount capability offers easy and convenient installation on the PCB, reducing assembly time and costs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on the circuit board, maximizing space utilization.

Terminal Form: GULL WING

The gull wing terminals provide secure connections and facilitate soldering during assembly, ensuring a reliable electrical connection.

No. of Elements: 1

With one element, the transistor simplifies circuit design and reduces the risk of component failure, enhancing overall system reliability.

No. of Terminals: 3

The three terminals enable easy integration into a circuit, offering flexibility in connection options for different applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves valuable space on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 70

The minimum DC current gain of 70 ensures stable and predictable transistor performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50V provides a wide safety margin for voltage spikes, ensuring reliable operation in challenging environments.

Transistor Element Material: SILICON

The silicon material of the transistor element offers high efficiency, low noise, and excellent thermal conductivity, making it an ideal choice for various applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, the transistor can handle moderate current loads, suitable for low-power electronic applications.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting orientations on the PCB, providing convenience in circuit layout and design.

Nominal Transition Frequency (fT): 170 MHz

The high nominal transition frequency of 170MHz ensures fast response times and high-frequency performance, making it suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR108E6433HTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR108E6433HTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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