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BCR108WE6327

Infineon Technologies

BCR108WE6327 by Infineon Technologies

Infineon's BCR108WE6327 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 170MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.012

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Nova Conductors

Japan . 500 parts In-Stock

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$0.012

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VNN

France . 9,181 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,386 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,000 parts In-Stock

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Vyrian

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Digiode

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Continental Prestige Electronics

USA . 3,052 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.012

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Argo Parts USA

USA . 702 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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Corohmni

South Africa . 475 parts In-Stock

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$0.403

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Modulus Dynamics

Lithuania . 1,872 parts In-Stock

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$1.325

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$1.272

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$1.219

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Aztec Data Supply Inc.

USA . 124 parts In-Stock

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$1.810

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AZTECH Wire

Italy . 440 parts In-Stock

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$9.615

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Andel Nordic

Denmark . 56 parts In-Stock

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$26.680

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$18.674

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$18.674

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$26.680

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$18.674

Semicontronic

India . 1,246 parts In-Stock

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$47.050

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$45.874

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$45.638

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Ampacity Inc.

Singapore . 305 parts In-Stock

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$57.050

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Component Stockers USA

USA . 459 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 9,662 parts In-Stock

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Kepictronics

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Alle Elektronik GmbH

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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Assy Fe

Spain . 2,376 parts In-Stock

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Corphita

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Robosynatics

Brazil . 500 parts In-Stock

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Lucentia Tech

USA . 500 parts In-Stock

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Overview

Discover the BCR108WE6327 by Infineon Technologies, a high-quality NPN transistor with a built-in resistor designed for switching applications. With a maximum collector-emitter voltage of 50V and a peak reflow temperature of 260°C, this small-outline package offers reliability and performance. Whether you're working on consumer electronics or industrial automation, this transistor provides the value and benefits you need for your projects. Trust in Infineon Technologies for unparalleled quality and innovation in small signal bipolar junction transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications

Polarity or Channel Type: NPN

Allows for easy integration into NPN circuit configurations

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies the design process by eliminating the need for additional resistor components

Transistor Application: SWITCHING

Optimized for switching applications, offering efficient performance in switching circuits

Surface Mount: YES

Enables easy and secure mounting onto circuit boards for space-efficient designs

Package Shape: RECTANGULAR

Facilitates efficient placement and layout of the transistor within electronic devices

No. of Terminals: 3

Provides necessary connections for proper functionality in circuit designs

Minimum DC Current Gain (hFE): 70

Ensures consistent and reliable amplification of current in transistor applications

Maximum Collector-Emitter Voltage: 50 V

Offers a high voltage tolerance for versatile use in various voltage applications

Transistor Element Material: SILICON

Provides stable and reliable performance characteristics for the transistor

Maximum Collector Current (IC): 0.1 A

Supports a moderate current capacity for various circuit requirements

Terminal Finish: Matte Tin (Sn)

Ensures good electrical conductivity and solderability for secure terminal connections

Terminal Position: DUAL

Facilitates easy and secure connection of the transistor within circuit designs

Maximum Time At Peak Reflow Temperature (s): 40

Allows for safe reflow soldering processes without damaging the transistor

Peak Reflow Temperature °C: 260

Withstands high temperatures during manufacturing processes for reliable performance

Nominal Transition Frequency (fT): 170 MHz

Provides high-frequency operation for fast switching and amplification applications

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR108WE6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR108WE6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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