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BCR116SH6327XTSA1

Infineon Technologies

BCR116SH6327XTSA1 by Infineon Technologies

BCR116SH6327XTSA1 by Infineon is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, ideal for switching applications. With a min hFE of 70 and fT of 150MHz, it offers efficient performance in small outline packages for surface mount designs.

Median Price

$0.061

Lifecycle Status

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10

In-Stock Inventory

1k+

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Verical

USA . 108,000 parts In-Stock

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Arrow

USA . 24,000 parts In-Stock

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$0.061

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Distributors (In-Stock)

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Nova Conductors

Japan . 550 parts In-Stock

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$0.126

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$0.126

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Chip Stock

USA . 17,700 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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$0.215

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Vyrian

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Rutronik

Germany . 9,000 parts In-Stock

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$0.049

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TME

Poland . 2,890 parts In-Stock

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$0.098

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$0.075

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VNN

France . 2,758 parts In-Stock

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Digiode

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Semicontronic

India . 16,639 parts In-Stock

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$0.051

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$0.049

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Modulus Dynamics

Lithuania . 7,397 parts In-Stock

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$0.070

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$0.067

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$0.064

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Corohmni

South Africa . 437 parts In-Stock

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Ampacity Inc.

Singapore . 16,596 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$0.072

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$0.068

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$0.068

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Argo Parts USA

USA . 3,566 parts In-Stock

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$0.126

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$0.122

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Continental Prestige Electronics

USA . 1,890 parts In-Stock

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$0.126

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$0.123

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Aztec Data Supply Inc.

USA . 2,763 parts In-Stock

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$1.680

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AZTECH Wire

Italy . 868 parts In-Stock

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Eastek

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Perfect Parts

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RC Electronics

USA . 16,200 parts In-Stock

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Glotronic Ltd.

UK . 12,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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iodParts Technologies Inc.

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Microchip USA

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Netroflash

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Overview

Unleash the power of cutting-edge technology with the BCR116SH6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-notch quality and reliability in their products. This Small Signal Bipolar Junction Transistor (BJT) is designed for switching applications, providing seamless performance and efficiency. With its innovative design and built-in resistors, this NPN transistor offers unparalleled value and benefits to customers. Whether you're looking to boost your electronic projects or enhance your device's functionality, the BCR116SH6327XTSA1 is the perfect choice for all your needs. Elevate your projects to new heights with this high-performance transistor from Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps protect the transistor from external elements, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for various circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design by eliminating the need for an external resistor, reducing component count and PCB space.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control current flow in electronic circuits, making it suitable for power management.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and enabling automated assembly processes in manufacturing.

Package Shape: RECTANGULAR

Rectangular package shape provides a standardized form factor for easy mounting and handling in electronic circuits.

Terminal Form: GULL WING

Gull wing terminals ensure secure and reliable connections to the PCB, enhancing the durability and stability of the transistor in the circuit.

No. of Elements: 2

Having 2 elements in one package increases efficiency and functionality in circuit design, reducing the number of components required.

No. of Terminals: 6

Having 6 terminals allows for versatile connections in the circuit, enabling complex circuit configurations and flexibility in design.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact electronic devices and applications with size constraints.

Minimum DC Current Gain (hFE): 70

A minimum DC current gain of 70 ensures reliable amplification and signal processing capabilities, enhancing the performance of the transistor in various applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle moderate voltage levels, suitable for a wide range of low to medium voltage applications.

Transistor Element Material: SILICON

Silicon material provides high efficiency and reliability in electronic circuits, ensuring stable performance and longevity of the transistor.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1A allows for efficient current conduction in the circuit, enabling the transistor to handle moderate power loads with ease.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity, ensuring reliable connections in the circuit for optimal performance.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit layout and connections, accommodating different mounting orientations and configurations.

Nominal Transition Frequency (fT): 150 MHz

A nominal transition frequency of 150MHz indicates high-speed performance, making this transistor suitable for high-frequency applications such as RF amplification and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR116SH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR116SH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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