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BCR135E6327HTSA1

Infineon Technologies

BCR135E6327HTSA1 by Infineon Technologies

Infineon BCR135E6327HTSA1 is a NPN BJT transistor with built-in resistor for switching applications. Features include 50V max collector-emitter voltage, 0.1A max collector current, and 150MHz transition frequency. Packaged in plastic/epoxy with gull wing terminals, it's ideal for surface mount designs requiring small outline packages.

Median Price

$0.223

Lifecycle Status

EOL

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 76 parts In-Stock

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$0.320

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76

$0.320

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Distrelec

Netherlands . 2,925 parts In-Stock

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$0.326

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$0.228

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$0.326

$0.228

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Newark

USA . 26,213 parts In-Stock

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$0.412

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26,213

$0.412

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Arrow

USA . 24,000 parts In-Stock

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$0.031

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$0.031

Farnell

UK . 22,891 parts In-Stock

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$0.111

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$0.077

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$0.076

22,891

-

$0.111

$0.077

$0.076

Verical

USA . 3,000 parts In-Stock

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$0.126

3,000

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$0.126

Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

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$0.108

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870

$0.108

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Digiode

USA . 621 parts In-Stock

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$0.228

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621

$0.228

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Maritex

Poland . 2,395 parts In-Stock

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$0.418

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$0.183

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$0.101

10k+ parts

$0.088

2,395

$0.418

$0.183

$0.101

$0.088

Schukat

Germany . 70,500 parts In-Stock

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$0.063

10k+ parts

$0.039

70,500

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$0.063

$0.039

Vyrian

USA . 42,773 parts In-Stock

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Greenchips

USA . 26,091 parts In-Stock

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Chip Stock

USA . 7,500 parts In-Stock

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Partservice

France . 5,465 parts In-Stock

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$0.103

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$0.039

5,465

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$0.103

$0.039

VNN

France . 4,500 parts In-Stock

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4,500

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Micros

Poland . 3,065 parts In-Stock

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$0.043

3,065

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$0.043

Rutronik

Germany . 3,000 parts In-Stock

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$0.042

3,000

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$0.042

NAC Semi

USA . 3,000 parts In-Stock

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$0.236

3,000

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$0.236

Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

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$0.110

10k+ parts

$0.042

3,000

-

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$0.110

$0.042

NexGen Digital

USA . 14 parts In-Stock

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14

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Distributors (Availability)

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Ampacity Inc.

Singapore . 42,646 parts In-Stock

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$0.026

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42,646

$0.026

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Semicontronic

India . 40,625 parts In-Stock

1+ parts

$0.026

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$0.025

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$0.025

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40,625

$0.026

$0.025

$0.025

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Argo Parts USA

USA . 2,301 parts In-Stock

1+ parts

$0.074

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$0.072

2,301

$0.074

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$0.072

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

$0.108

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$0.103

1k+ parts

$0.097

10k+ parts

$0.096

500

$0.108

$0.103

$0.097

$0.096

Corphita

USA . 919 parts In-Stock

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$0.216

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919

$0.216

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Modulus Dynamics

Lithuania . 2,939 parts In-Stock

1+ parts

$0.428

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$0.411

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$0.394

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2,939

$0.428

$0.411

$0.394

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Aztec Data Supply Inc.

USA . 3,864 parts In-Stock

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$1.300

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3,864

$1.300

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Corohmni

South Africa . 278 parts In-Stock

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$1.693

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278

$1.693

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$2.130

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$1.938

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$1.747

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450

$2.130

$1.938

$1.747

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RC Electronics

USA . 123,312 parts In-Stock

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$0.070

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$0.060

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$0.060

123,312

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Perfect Parts

USA . 46,408 parts In-Stock

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Metaverse IC Inc.

Canada . 30,266 parts In-Stock

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Continental Prestige Electronics

USA . 29,641 parts In-Stock

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$0.151

1k+ parts

$0.067

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$0.044

29,641

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$0.151

$0.067

$0.044

Eastek

USA . 6,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,471 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of small signal bipolar junction transistors with the BCR135E6327HTSA1 by Infineon Technologies. Designed for switching applications, this NPN transistor with a built-in resistor offers reliable performance and high-quality construction. Perfect for a variety of electronic projects, this surface-mount transistor provides efficient power dissipation and a high DC current gain. With its compact size and durable package body material, the BCR135E6327HTSA1 delivers exceptional value and performance to customers looking for a versatile and dependable solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Suitable for surface mount technology, enabling easy and efficient assembly in modern electronics.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB and space-saving integration within the circuit.

Terminal Form: GULL WING

Gull wing terminals provide secure connections during soldering and offer mechanical stability.

Maximum Power Dissipation (Abs): 0.2 W

With a low power dissipation rating, this transistor is energy-efficient and well-suited for low-power applications.

Minimum DC Current Gain (hFE): 70

A high DC current gain ensures reliable amplification and signal processing in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring moderate voltage handling capability, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and temperature stability, making them ideal for various applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 ampere of current, suitable for low-current switching and amplification tasks.

Terminal Finish: TIN

Tin terminal finish offers good solderability and corrosion resistance, ensuring robust connections in the circuit.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and connection options, enhancing ease of circuit integration.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR135E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR135E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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