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BCR108SH6327XTSA1

Infineon Technologies

BCR108SH6327XTSA1 by Infineon Technologies

Infineon's BCR108SH6327XTSA1 is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 170MHz. Its Gull Wing terminals and AEC-Q101 standard make it ideal for automotive electronics.

Median Price

$0.084

Lifecycle Status

EOL

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 2 parts In-Stock

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$0.029

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2

$0.029

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Adafruit Industries

USA . 70 parts In-Stock

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$0.107

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$0.107

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$0.107

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70

$0.107

$0.107

$0.107

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Mouser Electronics

USA . 49,583 parts In-Stock

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$0.360

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$0.177

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$0.100

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$0.085

49,583

$0.360

$0.177

$0.100

$0.085

Verical

USA . 306,000 parts In-Stock

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Chip1Stop

Japan . 33,000 parts In-Stock

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$0.061

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$0.061

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Digiode

USA . 828 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Rutronik

Germany . 63,000 parts In-Stock

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$0.056

Vyrian

USA . 53,983 parts In-Stock

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Chip Stock

USA . 53,002 parts In-Stock

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Schukat

Germany . 32,000 parts In-Stock

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VNN

France . 13,165 parts In-Stock

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IBS Electronics

USA . 12,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.199

6,000

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$0.199

TME

Poland . 2,477 parts In-Stock

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$0.089

1k+ parts

$0.074

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2,477

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$0.089

$0.074

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Semi Source

USA . 1,793 parts In-Stock

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1,793

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Component Sense

UK . 209 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 135,074 parts In-Stock

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$0.052

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$0.052

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Semicontronic

India . 134,952 parts In-Stock

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$0.052

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$0.051

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$0.050

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134,952

$0.052

$0.051

$0.050

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Modulus Dynamics

Lithuania . 23,423 parts In-Stock

1+ parts

$0.093

100+ parts

$0.089

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$0.086

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23,423

$0.093

$0.089

$0.086

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Corohmni

South Africa . 28 parts In-Stock

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$0.093

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28

$0.093

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Corphita

USA . 115 parts In-Stock

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$0.096

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$0.096

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.107

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$0.107

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70

$0.107

$0.107

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Continental Prestige Electronics

USA . 3,331 parts In-Stock

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$0.126

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$0.123

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Argo Parts USA

USA . 2,624 parts In-Stock

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$0.126

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$0.122

2,624

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Bastille Electronics

Australia . 800 parts In-Stock

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$0.154

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$0.146

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$0.139

10k+ parts

$0.137

800

$0.154

$0.146

$0.139

$0.137

Aztec Data Supply Inc.

USA . 2,128 parts In-Stock

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$0.821

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Eastek

USA . 147,000 parts In-Stock

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$0.170

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RC Electronics

USA . 127,601 parts In-Stock

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$0.090

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$0.090

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QUARKTWIN TECHNOLOGY LTD

USA . 29,346 parts In-Stock

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Microchip USA

USA . 23,566 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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Overview

Elevate your electronic designs with the BCR108SH6327XTSA1 by Infineon Technologies. Crafted with precision and expertise, this small signal bipolar junction transistor offers unparalleled performance in switching applications. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 170 MHz, this NPN transistor is designed to exceed expectations. Its compact package shape and gull wing terminals make it easy to integrate into your projects. Trust Infineon Technologies for quality components that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides excellent durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile for a wide range of circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor in each element simplifies circuit design and reduces the need for additional components, making this transistor convenient and cost-effective.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance in turning on and off electrical signals.

Surface Mount: YES

Being surface mountable allows for easy and space-saving PCB assembly, making this transistor suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 70

With a minimum DC current gain of 70, this transistor provides reliable amplification of current signals in various circuits.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V ensures stable operation within specified voltage limits, offering protection against voltage spikes.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, this transistor is suitable for low to medium power applications.

Nominal Transition Frequency (fT): 170 MHz

With a high nominal transition frequency of 170MHz, this transistor can effectively handle high-frequency signals, making it ideal for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR108SH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR108SH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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