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BCR112E6327HTSA1

Infineon Technologies

BCR112E6327HTSA1 by Infineon Technologies

BCR112E6327HTSA1 by Infineon Technologies is a NPN small signal bipolar junction transistor (BJT) with a built-in resistor. It is used for switching applications and has a max collector-emitter voltage of 50V and a min DC current gain of 20.

Median Price

$0.284

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 23,973 parts In-Stock

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$0.412

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23,973

$0.412

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Mouser Electronics

USA . 52,885 parts In-Stock

1+ parts

$0.470

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$0.206

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$0.113

10k+ parts

$0.075

52,885

$0.470

$0.206

$0.113

$0.075

Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$1.106

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$1.051

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$1.051

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70

$1.106

$1.051

$1.051

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Verical

USA . 234,000 parts In-Stock

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Arrow

USA . 138,000 parts In-Stock

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Farnell

UK . 57,000 parts In-Stock

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$0.284

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$0.135

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$0.284

$0.135

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Element14

Singapore . 30,305 parts In-Stock

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$0.167

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$0.075

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$0.074

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$0.167

$0.075

$0.074

Chip1Stop

Japan . 18,000 parts In-Stock

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$0.035

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Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

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$0.079

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15

$0.079

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TME

Poland . 10 parts In-Stock

1+ parts

$0.180

100+ parts

$0.153

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$0.101

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$0.070

10

$0.180

$0.153

$0.101

$0.070

Digiode

USA . 800 parts In-Stock

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$0.188

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800

$0.188

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Chip Stock

USA . 84,500 parts In-Stock

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Schukat

Germany . 39,000 parts In-Stock

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$0.059

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$0.037

39,000

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$0.059

$0.037

Rutronik

Germany . 33,000 parts In-Stock

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$0.040

33,000

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$0.040

Vyrian

USA . 27,790 parts In-Stock

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VNN

France . 23,587 parts In-Stock

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23,587

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Micros sp.j. W. Kędra i J. Lic

Poland . 22,740 parts In-Stock

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$0.096

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$0.037

22,740

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$0.096

$0.037

Sensible Micro Corp

USA . 15,450 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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$0.117

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$0.117

Semi Source

USA . 11,000 parts In-Stock

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Micros

Poland . 3,750 parts In-Stock

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$0.040

3,750

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$0.040

Partservice

France . 3,740 parts In-Stock

1+ parts

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$0.096

10k+ parts

$0.037

3,740

-

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$0.096

$0.037

Cyclops Electronics Ltd

UK . 3,090 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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$0.087

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$0.052

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$0.035

3,000

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$0.087

$0.052

$0.035

Dan-Mar Components

USA . 3,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,318 parts In-Stock

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2,318

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Distributors (Availability)

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Ampacity Inc.

Singapore . 26,509 parts In-Stock

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$0.029

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26,509

$0.029

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Semicontronic

India . 25,639 parts In-Stock

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$0.029

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$0.028

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$0.028

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25,639

$0.029

$0.028

$0.028

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Argo Parts USA

USA . 1,642 parts In-Stock

1+ parts

$0.069

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$0.067

1,642

$0.069

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$0.067

Netroflash

USA . 2,000 parts In-Stock

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$0.079

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2,000

$0.079

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Corphita

USA . 322 parts In-Stock

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$0.178

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322

$0.178

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Continental Prestige Electronics

USA . 71,585 parts In-Stock

1+ parts

$0.380

100+ parts

$0.145

1k+ parts

$0.064

10k+ parts

$0.041

71,585

$0.380

$0.145

$0.064

$0.041

Corohmni

South Africa . 452 parts In-Stock

1+ parts

$0.961

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452

$0.961

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$1.106

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$1.051

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$1.051

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70

$1.106

$1.051

$1.051

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Aztec Data Supply Inc.

USA . 1,898 parts In-Stock

1+ parts

$1.511

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1,898

$1.511

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Modulus Dynamics

Lithuania . 6,827 parts In-Stock

1+ parts

$1.767

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$1.696

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$1.626

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6,827

$1.767

$1.696

$1.626

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Glotronic Ltd.

UK . 333,600 parts In-Stock

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GreenTree Electronics

Israel . 39,000 parts In-Stock

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Perfect Parts

USA . 35,491 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,867 parts In-Stock

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12,867

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Robosynatics

Brazil . 950 parts In-Stock

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950

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Lucentia Tech

USA . 950 parts In-Stock

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950

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Overview

Discover the BCR112E6327HTSA1, a high-quality Small Signal Bipolar Junction Transistor (BJT) manufactured by Infineon Technologies. This NPN transistor offers outstanding advantages and benefits for switching applications. With its single configuration and built-in resistor, it provides seamless operation and improved performance. The BCR112E6327HTSA1 is surface mountable, making it easy to integrate into any design. Its compact rectangular package shape and gull-wing terminals ensure convenience during installation. Experience the value and reliability this product offers, backed by Infineon Technologies' exceptional manufacturing expertise. Unlock new possibilities with the BCR112E6327HTSA1 and take your projects to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides excellent insulation and protection for the transistor, making it a durable and reliable choice.

Polarity or Channel Type: NPN

The NPN configuration enables efficient current flow and allows for easy signal switching, making this transistor suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, promoting easier integration of the transistor into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and efficient control of electrical currents, providing reliable switching performance.

Surface Mount: YES

Being surface mount compatible, this transistor can be easily soldered onto a circuit board, enabling streamlined manufacturing processes and reducing assembly costs.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on a circuit board, helping to optimize overall system design and layout.

Terminal Form: GULL WING

With gull wing terminals, this transistor offers reliable solder joint connections, enhancing its stability and ensuring secure electrical connections.

No. of Elements: 1

With only one element, this transistor simplifies circuit design and reduces complexity, making it a convenient choice for various applications.

No. of Terminals: 3

The three terminals facilitate easy connection to a circuit, promoting ease of use and enhancing compatibility with a wide range of electronic systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact integration into tight spaces, enabling miniaturization of electronic devices.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor ensures sufficient amplification of input signals, enhancing overall signal strength and performance.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50 V enables this transistor to handle higher voltage levels, expanding its range of applications.

Transistor Element Material: SILICON

Constructed with silicon as the transistor element material, it provides excellent thermal conductivity and ensures reliable performance even in demanding operating conditions.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current rating of 0.1 A enables this transistor to handle high-current applications, making it suitable for various power-related tasks.

Terminal Finish: TIN

The tin terminal finish offers corrosion resistance and ensures reliable electrical connections, enhancing the longevity and performance of the transistor.

Terminal Position: DUAL

With dual terminal positions, this transistor provides flexibility in circuit board layout and allows for easier integration into different electronic systems.

Moisture Sensitivity Level (MSL): 1

The moisture sensitivity level of 1 indicates that this transistor has a low sensitivity to moisture, ensuring its reliability and minimizing the risk of damage during storage and assembly.

Nominal Transition Frequency (fT): 140 MHz

With a high nominal transition frequency of 140 MHz, this transistor is capable of operating at high speeds and is suitable for applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR112E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR112E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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