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2SD1816T-H

Onsemi

2SD1816T-H by Onsemi

Onsemi's 2SD1816T-H is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 180MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.

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3

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1k+

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AZTECH Wire

Italy . 943 parts In-Stock

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Component Stockers USA

USA . 570 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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SupplyDigital Components

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Corphita

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Native Components

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Kulean Microsystems

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Northwest PG Solutions

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Overview

Unlock the power of reliable performance with the Onsemi 2SD1816T-H Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their high-quality components, this NPN transistor is ideal for switching applications. With a maximum power dissipation of 20W and a collector current of 4A, this transistor offers exceptional value and versatility. Whether you're designing circuits for industrial automation or consumer electronics, the 2SD1816T-H delivers the performance you need to bring your projects to life. Upgrade to Onsemi for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in electronic designs.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to incorporate into circuits.

Transistor Application: SWITCHING

Designed for efficient switching operations, suitable for applications requiring rapid on/off transitions.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and soldering on PCBs or breadboards.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure reliable connections and easy mounting on PCBs.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows for handling of moderate to high power loads without overheating.

Minimum DC Current Gain (hFE): 200

High DC current gain provides amplification for weak input signals, making it ideal for signal processing applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial or automotive environments.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows for handling of higher voltage levels in circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuit applications.

Maximum Collector Current (IC): 4 A

Capable of handling moderate to high current levels, suitable for power switching applications.

Terminal Finish: TIN BISMUTH

Tin bismuth finish ensures good solderability and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and reduces complexity in design.

Case Connection: COLLECTOR

Collector connection simplifies circuit layout and allows for efficient current flow in the transistor.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency enables fast switching speeds and high-frequency operation in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1816T-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1816T-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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