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BC857CWH6327XTSA1

Infineon Technologies

BC857CWH6327XTSA1 by Infineon Technologies

BC857CWH6327XTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 420, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package suitable for surface mount technology.

Median Price

$0.051

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.470

100+ parts

$0.428

1k+ parts

$0.385

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50

$0.470

$0.428

$0.385

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Rochester

USA . 363,961 parts In-Stock

1+ parts

-

100+ parts

$0.048

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$0.040

10k+ parts

$0.035

363,961

-

$0.048

$0.040

$0.035

Verical

USA . 336,594 parts In-Stock

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$0.044

336,594

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$0.044

Farnell

UK . 336,594 parts In-Stock

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$0.054

336,594

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$0.054

Arrow

USA . 45,000 parts In-Stock

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45,000

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EBV Elektronik

Germany . 24,000 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 537 parts In-Stock

1+ parts

$0.030

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-

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537

$0.030

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Bristol Electronics

USA . 2,494 parts In-Stock

1+ parts

$0.212

100+ parts

$0.106

1k+ parts

$0.043

10k+ parts

-

2,494

$0.212

$0.106

$0.043

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IBS Electronics

USA . 33,000 parts In-Stock

1+ parts

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$0.048

33,000

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$0.048

NAC Semi

USA . 18,000 parts In-Stock

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$0.190

18,000

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$0.190

Vyrian

USA . 5,559 parts In-Stock

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5,559

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ACDS - Activité Composants Distribution Service

France . 2,494 parts In-Stock

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2,494

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Dan-Mar Components

USA . 2,494 parts In-Stock

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2,494

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VNN

France . 2,383 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 180,585 parts In-Stock

1+ parts

$0.027

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180,585

$0.027

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Corphita

USA . 661 parts In-Stock

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$0.029

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661

$0.029

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Modulus Dynamics

Lithuania . 24,064 parts In-Stock

1+ parts

$0.056

100+ parts

$0.054

1k+ parts

$0.052

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-

24,064

$0.056

$0.054

$0.052

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.061

100+ parts

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$0.059

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1,000

$0.061

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$0.059

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Argo Parts USA

USA . 1,280 parts In-Stock

1+ parts

$0.062

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$0.060

1,280

$0.062

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$0.060

Continental Prestige Electronics

USA . 383 parts In-Stock

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$0.062

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$0.061

383

$0.062

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$0.061

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.470

100+ parts

$0.428

1k+ parts

$0.385

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50

$0.470

$0.428

$0.385

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AZTECH Wire

Italy . 89 parts In-Stock

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$10.480

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89

$10.480

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Andel Nordic

Denmark . 124 parts In-Stock

1+ parts

$22.550

100+ parts

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$15.783

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$15.783

124

$22.550

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$15.783

$15.783

Component Stockers USA

USA . 152,486 parts In-Stock

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$0.050

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$0.050

Glotronic Ltd.

UK . 55,200 parts In-Stock

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Perfect Parts

USA . 43,680 parts In-Stock

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Eastek

USA . 33,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Overview

Unleash the power of innovation with the BC857CWH6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for amplifier applications. With a high DC current gain and a maximum collector-emitter voltage of 45V, this PNP transistor offers unparalleled performance and reliability. Say goodbye to outdated technology and step into the future with the BC857CWH6327XTSA1. Experience the difference with Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits where PNP transistors are required, enhancing compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to work with this transistor.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliable amplification of signals.

Surface Mount: YES

The surface-mount capability allows for easy and secure mounting on PCBs, saving space and improving overall circuit layout.

Package Shape: RECTANGULAR

The rectangular shape of the package provides efficient use of space on the PCB, facilitating tight packing of components.

Terminal Form: GULL WING

The gull wing terminal form offers secure and reliable solder connections, ensuring stable electrical connections in the circuit.

No. of Terminals: 3

The three terminals provide essential connections for proper transistor operation, ensuring easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices with limited room for components.

Minimum DC Current Gain (hFE): 420

The high minimum DC current gain ensures consistent and reliable amplification of signals in the circuit, enhancing performance.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating allows for operation in circuits with higher voltages, increasing versatility.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent thermal stability and performance, ensuring reliable operation.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, suitable for various applications.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options on the PCB, accommodating different circuit layouts and designs.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this transistor suitable for automotive applications.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency enables high-speed switching and amplification of signals, making this transistor suitable for fast response applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857CWH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC857CWH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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