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BCR112WH6327XTSA1

Infineon Technologies

BCR112WH6327XTSA1 by Infineon Technologies

BCR112WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, DC current gain of 20, and max collector current of 0.1A. This surface mount transistor in small outline package is made of silicon and operates at a nominal transition frequency of 140MHz.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 101,938 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

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$0.040

101,938

-

$0.053

$0.044

$0.040

Verical

USA . 48,338 parts In-Stock

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$0.050

48,338

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$0.050

EBV Elektronik

Germany . 30,000 parts In-Stock

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Master Electronics

USA . 25,997 parts In-Stock

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Chip1Stop

Japan . 25,997 parts In-Stock

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$0.037

25,997

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$0.037

Distributors (In-Stock)

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Digiode

USA . 394 parts In-Stock

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$0.042

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394

$0.042

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Nova Conductors

Japan . 10 parts In-Stock

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$0.045

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10

$0.045

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DigiKey Marketplace

USA . 173,600 parts In-Stock

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TME

Poland . 30,000 parts In-Stock

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Vyrian

USA . 3,971 parts In-Stock

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VNN

France . 3,536 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 507 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 91,824 parts In-Stock

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$0.031

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$0.031

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Semicontronic

India . 91,795 parts In-Stock

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$0.031

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91,795

$0.031

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Corphita

USA . 141 parts In-Stock

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$0.040

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Modulus Dynamics

Lithuania . 1,052 parts In-Stock

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$0.044

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$0.042

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$0.040

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1,052

$0.044

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$0.040

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Corohmni

South Africa . 856 parts In-Stock

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$0.044

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856

$0.044

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Aranea Global

USA . 1,000 parts In-Stock

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$0.044

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$0.042

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1,000

$0.044

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Argo Parts USA

USA . 3,600 parts In-Stock

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$0.045

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$0.044

3,600

$0.045

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$0.044

Continental Prestige Electronics

USA . 258 parts In-Stock

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$0.045

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$0.044

258

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Aztec Data Supply Inc.

USA . 4,385 parts In-Stock

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$1.260

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4,385

$1.260

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Advanced Electronics

New Zealand . 650 parts In-Stock

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$2.145

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$1.952

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$1.759

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650

$2.145

$1.952

$1.759

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AZTECH Wire

Italy . 581 parts In-Stock

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$9.310

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581

$9.310

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Andel Nordic

Denmark . 3,187 parts In-Stock

1+ parts

$31.050

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$21.732

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$21.732

3,187

$31.050

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$21.732

Perfect Parts

USA . 73,920 parts In-Stock

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Overview

Elevate your electronic designs with the BCR112WH6327XTSA1 by Infineon Technologies. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled performance in switching applications. With its NPN polarity and built-in resistor configuration, this transistor delivers seamless functionality and reliability. Whether you're a seasoned professional or an aspiring hobbyist, this product guarantees optimal results every time. Upgrade your projects today with the unmatched quality and value of the BCR112WH6327XTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that provides protection for the transistor, ideal for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed for fast switching applications, ensuring efficient performance.

Surface Mount: YES

Suitable for automated assembly processes, increasing production efficiency.

Package Shape: RECTANGULAR

Compact shape that saves space on the PCB, perfect for applications with limited board space.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering during assembly.

No. of Terminals: 3

Simple 3-terminal design for easy integration into various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package ideal for densely populated circuit boards.

Minimum DC Current Gain (hFE): 20

High DC current gain ensures reliable and consistent amplification in the circuit.

Maximum Collector-Emitter Voltage: 50 V

With a high voltage rating, suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current loads, suitable for many low-power applications.

Terminal Finish: TIN

Tin finish provides excellent conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for easy installation and flexibility in circuit design.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency ensures fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR112WH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR112WH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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