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2SD1816T-E

Onsemi

2SD1816T-E by Onsemi

2SD1816T-E by Onsemi is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its single configuration and high transition frequency of 180MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.

Median Price

$0.423

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 17,600 parts In-Stock

1+ parts

-

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$0.423

1k+ parts

$0.351

10k+ parts

$0.313

17,600

-

$0.423

$0.351

$0.313

Distributors (In-Stock)

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Digiode

USA . 247 parts In-Stock

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$0.330

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247

$0.330

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Vyrian

USA . 8,988 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Corphita

USA . 1,924 parts In-Stock

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$0.312

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$0.312

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Corohmni

South Africa . 386 parts In-Stock

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$0.347

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386

$0.347

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AZTECH Wire

Italy . 902 parts In-Stock

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$10.960

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902

$10.960

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QUARKTWIN TECHNOLOGY LTD

USA . 17,709 parts In-Stock

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Continental Prestige Electronics

USA . 17,600 parts In-Stock

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$0.313

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Kulean Microsystems

USA . 6,930 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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TANS Electronics

Latvia . 2,298 parts In-Stock

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Northwest PG Solutions

USA . 2,214 parts In-Stock

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SupplyDigital Components

Austria . 1,368 parts In-Stock

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Native Components

USA . 842 parts In-Stock

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UHIMA Technologies

Türkiye . 688 parts In-Stock

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Problanco Electronics

Mexico . 467 parts In-Stock

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467

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Overview

Upgrade your electronics with the 2SD1816T-E by Onsemi! Made by a trusted manufacturer, this Small Signal Bipolar Junction Transistor offers high-quality performance for switching applications. With a maximum power dissipation of 20W and a collector current of 4A, this NPN transistor provides reliable functionality in a variety of circuits. Trust Onsemi to deliver top-notch products that will elevate your projects to the next level. Choose the 2SD1816T-E for superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for different electronic projects.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to work with this transistor.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and mounting in electronic circuits and PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy soldering and connection to circuit boards, making installation simpler.

Maximum Power Dissipation (Abs): 20 W

With a high power dissipation rating, this transistor can handle higher power loads without overheating.

Package Style (Meter): IN-LINE

The in-line package style saves space and allows for more compact circuit designs.

Minimum DC Current Gain (hFE): 200

A high DC current gain ensures reliable and consistent amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures in various applications.

Maximum Collector-Emitter Voltage: 100 V

The high maximum voltage rating allows for safe operation in circuits with higher voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance and reliability, making this product a dependable choice for electronic projects.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, this transistor is suitable for applications requiring higher current levels.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish provides good solderability and reliability in electronic connections.

Terminal Position: SINGLE

A single terminal position simplifies installation and connectivity in electronic circuits.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and integration, ensuring proper functionality.

Nominal Transition Frequency (fT): 180 MHz

With a high transition frequency, this transistor can operate at high frequencies, making it suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1816T-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1816T-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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