Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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Selected
RN2608(TE85L,F)
Toshiba
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;
.1 A
80
2
PNP
.3 W
BIP General Purpose Small Signal
YES
SILICON
RN2711(TE85L,F)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;
120
.2 W
RN2911FE(TE85L,F)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;
.1 W
RN2962FE(TE85L,F)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;
50
RN2971FE(TE85L,F)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;
RN4609(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 70;
70
NPN AND PNP
RN4611(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 120;
RN2967FE(TE85L,F)
RN2969FE(TE85L,F)
RN46A1(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 50;
RN4989(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;
RN4988(TE85L,F)
RN4990(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;
RN49A1FE(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 2;
RN49A1(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 80;
RN2101ACT(TPL3)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;
.08 A
30
1
RN2102ACT(TPL3)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;
RN2104ACT(TPL3)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;
CE2A3Q-T-AZ
Renesas Electronics
NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500; No. of Elements: 1;
2 A
500
NPN
1 W
NO
GA1L4M-T2-A
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 85; Transistor Element Material: SILICON;
85
.15 W
FMMT720-7
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1.5 A;
1.5 A
25 pF
40 V
SINGLE
12
R-PDSO-G3
e3
3
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
.625 W
Other Transistors
MATTE TIN
GULL WING
DUAL
SWITCHING
190 MHz
.33 V
RN4602(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;
BIP General Purpose Small Signals
RN1116(TE85L,F)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;
RN1117(TE85L,F)
Toshiba's RN1117(TE85L,F) is an NPN BJT transistor with a max power dissipation of 0.1W and min DC current gain of 30. Ideal for surface mount applications, it has a max collector current of 0.1A making it suitable for small signal amplification in electronic circuits.
RN1508(TE85L,F)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;
RN1970(TE85L,F)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;
RN1971(TE85L,F)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;
RN4610(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; No. of Elements: 2;
HN1B04F(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 70;
.5 A
MCH6542-TL-E
Onsemi
MCH6542-TL-E by Onsemi is a Small Signal BJT available in NPN and PNP types. With a max power dissipation of 0.55W, min hFE of 300, and max IC of 0.3A, it operates up to 150 °C. Ideal for surface mount applications with Tin/Bismuth finish, this transistor suits various electronic designs.
.3 A
300
e6
.55 W
Tin/Bismuth (Sn/Bi)
2SC2909S-AA
2SC2909S-AA by Onsemi is a NPN BJT transistor for switching applications. It has a low VCEsat of 0.3V, hFE of 140, and can handle up to 160V. With a max power dissipation of 0.6W, it operates at temperatures up to 150°C.
.07 A
2 pF
160 V
140
O-PBCY-T3
ROUND
CYLINDRICAL
.6 W
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
THROUGH-HOLE
BOTTOM
150 MHz
.3 V
2SA1575E-TD-E
Onsemi's 2SA1575E-TD-E is a PNP Darlington transistor with max VCEsat of 1V, hFE of 100, and fT of 400MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Suitable for surface mount designs with small outline package style.
COLLECTOR
2.3 pF
200 V
DARLINGTON
100
R-PSSO-F3
.5 W
1.3 W
FLAT
AMPLIFIER
400 MHz
1 V
PDTA143ZK,135
NXP Semiconductors
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;
.25 W
TTB1020B,S4X(S
PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 7 A; No. of Elements: 2; Transistor Element Material: SILICON;
7 A
2000
30 W
CMPT2907ABKPBFREE
Central Semiconductor
CMPT2907ABKPBFREE by Central Semiconductor is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 60V. It is commonly used for switching applications and has a max operating temperature of 150°C.
.6 A
8 pF
60 V
200 MHz
100 ns
45 ns
1.6 V
STL73D-AP
STMicroelectronics
STL73D-AP by STMicroelectronics is a NPN BJT transistor with 400V max collector-emitter voltage, 1.5A max collector current, and 1.5W max power dissipation. Ideal for switching applications due to its single configuration with built-in diode and fast turn-off time of 4700ns. Package style is cylindrical with matte tin terminal finish.
400 V
SINGLE WITH BUILT-IN DIODE
4
TO-92
1.5 W
Not Qualified
4700 ns
MSB92AS1WT1G
MSB92AS1WT1G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. Operating up to 150 °C, it offers a min hFE of 25 and 0.15W power dissipation.
300 V
25
NOT SPECIFIED
Matte Tin (Sn) - annealed
50 MHz
BC847AQ-7-F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;
45 V
110
-65 Cel
.35 W
300 MHz
BC848CQ-7-F
30 V
420
BC857BSQ-7-F
Diodes Inc. BC857BSQ-7-F is a PNP BJT with 2 elements, ideal for switching applications. Features include max. collector-emitter voltage of 45V, max. collector current of 0.1A, and min. DC current gain of 220 (hFE). Package: Small Outline, Surface Mount with Gull Wing terminals.
HIGH RELIABILITY
SEPARATE, 2 ELEMENTS
220
R-PDSO-G6
6
AEC-Q101
100 MHz
DCX114EUQ-13-F
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTANCE RATIO IS 1
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
AEC-Q101; IATF 16949; MIL-STD-202
250 MHz
DCX114YUQ-13-F
BUILT IN BIAS RESISTANCE RATIO IS 4.7
DCX114YUQ-13R-F
DCX124EUQ-13-F
DCX124EUQ-13R-F
DDA114EUQ-7-F
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;
.05 A
DDA114TUQ-13-F
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
DDA114TUQ-7-F
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;
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