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CE2A3Q-T-AZ

Renesas Electronics

CE2A3Q-T-AZ by Renesas Electronics

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500; No. of Elements: 1;

Median Price

$0.588

Lifecycle Status

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3

In-Stock Inventory

1k+

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Rochester

USA . 815 parts In-Stock

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-

100+ parts

$0.629

1k+ parts

$0.522

10k+ parts

$0.465

815

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$0.629

$0.522

$0.465

Verical

USA . 815 parts In-Stock

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$0.548

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815

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$0.548

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Vyrian

USA . 1,958 parts In-Stock

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1,958

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Distributors (Availability)

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Native Components

USA . 920 parts In-Stock

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$1.889

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920

$1.889

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Northwest PG Solutions

USA . 552 parts In-Stock

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$2.078

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552

$2.078

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AZTECH Wire

Italy . 1,215 parts In-Stock

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$8.280

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1,215

$8.280

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QUARKTWIN TECHNOLOGY LTD

USA . 8,672 parts In-Stock

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8,672

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CE2A3Q-T-AZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

2 A

Minimum DC Current Gain (hFE):

500

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

NO

Transistor Element Material:

SILICON

Trade Compliance

CE2A3Q-T-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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