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CE2A3Q-AY

Renesas Electronics

CE2A3Q-AY by Renesas Electronics

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 500;

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

< 1k

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Native Components

USA . 921 parts In-Stock

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$0.604

100+ parts

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921

$0.604

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Northwest PG Solutions

USA . 1,205 parts In-Stock

1+ parts

$0.664

100+ parts

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1k+ parts

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10k+ parts

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1,205

$0.664

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CE2A3Q-AY attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

2 A

Minimum DC Current Gain (hFE):

500

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

NO

Transistor Element Material:

SILICON

Trade Compliance

CE2A3Q-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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