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BC857BSQ-7-F

Diodes Incorporated

BC857BSQ-7-F by Diodes Incorporated

Diodes Inc. BC857BSQ-7-F is a PNP BJT with 2 elements, ideal for switching applications. Features include max. collector-emitter voltage of 45V, max. collector current of 0.1A, and min. DC current gain of 220 (hFE). Package: Small Outline, Surface Mount with Gull Wing terminals.

Median Price

$0.034

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 66,000 parts In-Stock

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Avnet

USA . 3,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$0.074

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50

$0.074

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Bristol Electronics

USA . 1,600 parts In-Stock

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$0.210

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$0.105

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$0.042

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$0.042

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Vyrian

USA . 16,728 parts In-Stock

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Sensible Micro Corp

USA . 9,000 parts In-Stock

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VNN

France . 2,526 parts In-Stock

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Ampacity Inc.

Singapore . 33,692 parts In-Stock

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$0.029

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Semicontronic

India . 33,257 parts In-Stock

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$0.028

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Continental Prestige Electronics

USA . 6,102 parts In-Stock

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$0.074

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$0.073

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Argo Parts USA

USA . 2,519 parts In-Stock

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$0.074

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$0.072

2,519

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$0.072

Corohmni

South Africa . 573 parts In-Stock

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$0.378

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Aztec Data Supply Inc.

USA . 2,459 parts In-Stock

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$1.470

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QUARKTWIN TECHNOLOGY LTD

USA . 4,356 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.073

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$0.070

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$0.069

2,000

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$0.073

$0.070

$0.069

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Enhance your electronic designs with the BC857BSQ-7-F from Diodes Incorporated, a leading manufacturer known for top-quality components. This Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering high reliability and performance. With its PNP polarity, compact design, and dual elements configuration, this transistor delivers exceptional value and efficiency. Trust Diodes Incorporated to provide innovative solutions for your projects, ensuring optimal functionality and durability. Explore the possibilities with the BC857BSQ-7-F and take your designs to the next level!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for switching applications and complements other components in PNP transistor circuits.

Configuration: SEPARATE, 2 ELEMENTS

Allows for more flexibility in circuit design and can be used for different applications that require separate transistor elements.

Transistor Application: SWITCHING

Designed specifically for switching tasks, making it efficient and reliable in applications where fast switching speeds are required.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels, suitable for many switching applications without overheating.

Terminal Form: GULL WING

Facilitates easy soldering onto PCBs and provides mechanical stability during operation.

Maximum Collector-Emitter Voltage: 45 V

Allows for safe operation in circuits with up to 45 volts, providing a wide range of compatibility.

Nominal Transition Frequency (fT): 100 MHz

Indicates high-speed performance, making it ideal for applications requiring fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857BSQ-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC857BSQ-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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