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RN1117(TE85L,F)

Toshiba

RN1117(TE85L,F) by Toshiba

Toshiba's RN1117(TE85L,F) is an NPN BJT transistor with a max power dissipation of 0.1W and min DC current gain of 30. Ideal for surface mount applications, it has a max collector current of 0.1A making it suitable for small signal amplification in electronic circuits.

Median Price

$0.166

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 388 parts In-Stock

1+ parts

$0.300

100+ parts

$0.113

1k+ parts

$0.074

10k+ parts

$0.050

388

$0.300

$0.113

$0.074

$0.050

Chip1Stop

Japan . 1,500 parts In-Stock

1+ parts

-

100+ parts

$0.039

1k+ parts

$0.032

10k+ parts

$0.030

1,500

-

$0.039

$0.032

$0.030

Verical

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.166

1,400

-

-

-

$0.166

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 14,724 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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14,724

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Overview

Experience the superior quality and reliability of Toshiba's RN1117(TE85L,F) NPN Small Signal Bipolar Junction Transistor. With a minimum DC current gain of 30 and maximum power dissipation of 0.1 W, this surface mount transistor is ideal for a wide range of applications. Whether you're designing consumer electronics, automotive systems, or industrial equipment, this transistor offers exceptional performance and efficiency. Trust in Toshiba's reputation for excellence and innovation to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, making this product versatile for various electronic projects.

Surface Mount: YES

Surface mount transistors are easy to mount on PCBs, saving space and simplifying assembly in compact electronic devices.

Maximum Power Dissipation (Abs): 0.1 W

With a maximum power dissipation of 0.1W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 indicates that the transistor amplifies current efficiently, making it suitable for signal amplification purposes.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable choice for electronic applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, suitable for low to medium power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1117(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1117(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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