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RN1112(TE85L,F)

Toshiba

RN1112(TE85L,F) by Toshiba

The Toshiba RN1112(TE85L,F) is a NPN small signal bipolar junction transistor (BJT) with surface mount capability. It has a max power dissipation of 0.1W and a min DC current gain of 120. This transistor is commonly used in various electronic applications requiring low power amplification or switching functions.

Median Price

$0.044

Lifecycle Status

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2

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1k+

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

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Aranea Global

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,184 parts In-Stock

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Argo Parts USA

USA . 3,786 parts In-Stock

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Ampacity Inc.

Singapore . 2,714 parts In-Stock

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Corohmni

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Aztec Data Supply Inc.

USA . 4,618 parts In-Stock

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AZTECH Wire

Italy . 824 parts In-Stock

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Overview

Discover the power of innovation with Toshiba's RN1112(TE85L,F) NPN bipolar junction transistor. As a leading manufacturer, Toshiba ensures top-notch quality in every product. This small signal transistor offers incredible value and benefits for various applications. With its surface mount capability and maximum power dissipation of 0.1W, this transistor is perfect for amplification tasks. Its minimum DC current gain of 120 guarantees reliable performance. Embrace the advantages of Toshiba's RN1112(TE85L,F) and unlock new possibilities in your projects.

Feature Benefit Bullets

Polarity or Channel Type:

NPN - This product's NPN polarity allows for efficient amplification and switching of signals, making it suitable for various applications.

Surface Mount:

YES - With surface mount capability, this product offers ease of installation and space-saving advantages, perfect for compact electronic devices.

No. of Elements:

1 - This transistor consists of a single element, simplifying its integration into circuit designs and reducing complexity.

Maximum Power Dissipation (Abs):

0.1 W - The ability to handle power dissipation up to 0.1 W ensures reliable operation and prevents overheating, thus enhancing the longevity of the device.

Minimum DC Current Gain (hFE):

120 - The high minimum DC current gain of 120 provides excellent signal amplification and efficiency in amplifying and controlling current flow.

Transistor Element Material:

SILICON - The use of silicon as the transistor element material enhances its overall performance, offering improved temperature stability and reliability.

Maximum Collector Current (IC):

0.1 A - With a maximum collector current rating of 0.1 A, this transistor can handle moderate current flows effectively, making it suitable for low to medium power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1112(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

120

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1112(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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