Loading...

Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
RN2702(TE85L,F) by Toshiba

RN2702(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

50

2

PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN1961(TE85L,F) by Toshiba

RN1961(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

30

2

NPN

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN1962(TE85L,F) by Toshiba

RN1962(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

50

2

NPN

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN1965(TE85L,F) by Toshiba

RN1965(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN1303(TE85L,F) by Toshiba

RN1303(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

70

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1103MFV(TPL3) by Toshiba

RN1103MFV(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.1 A

70

1

NPN

.15 W

BIP General Purpose Small Signal

YES

SILICON

RN1101CT(TPL3) by Toshiba

RN1101CT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .05 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Transistor Element Material: SILICON;

.05 A

30

1

NPN

.05 W

BIP General Purpose Small Signal

YES

SILICON

RN1107ACT(TPL3) by Toshiba

RN1107ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1108ACT(TPL3) by Toshiba

RN1108ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1109ACT(TPL3) by Toshiba

RN1109ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 70; No. of Elements: 1;

.08 A

70

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1112ACT(TPL3) by Toshiba

RN1112ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON; No. of Elements: 1;

.08 A

120

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1113ACT(TPL3) by Toshiba

RN1113ACT(TPL3)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.08 A

120

1

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1510(TE85L,F) by Toshiba

RN1510(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

120

2

NPN

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN1601(TE85L,F) by Toshiba

RN1601(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

30

2

NPN

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN1606(TE85L,F) by Toshiba

RN1606(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

260

NPN

.3 W

BIP General Purpose Small Signal

YES

30

SILICON

RN1610(TE85L,F) by Toshiba

RN1610(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

2

NPN

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN1704JE(TE85L,F) by Toshiba

RN1704JE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1708JE(TE85L,F) by Toshiba

RN1708JE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1709JE(TE85L,F) by Toshiba

RN1709JE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70; Peak Reflow Temperature (C): 260;

.1 A

70

2

260

NPN

.1 W

BIP General Purpose Small Signal

YES

30

SILICON

RN1710JE(TE85L,F) by Toshiba

RN1710JE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1901FE(TE85L,F) by Toshiba

RN1901FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 30;

.1 A

30

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1908FE(TE85L,F) by Toshiba

RN1908FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1909FE(TE85L,F) by Toshiba

RN1909FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

70

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1961FE(TE85L,F) by Toshiba

RN1961FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

30

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1963FE(TE85L,F) by Toshiba

RN1963FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

70

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1965FE(TE85L,F) by Toshiba

RN1965FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; Transistor Element Material: SILICON;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1967FE(TE85L,F) by Toshiba

RN1967FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1970FE(TE85L,F) by Toshiba

RN1970FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1971FE(TE85L,F) by Toshiba

RN1971FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2107ACT(TPL3) by Toshiba

RN2107ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2108ACT(TPL3) by Toshiba

RN2108ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 80;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN1911FE(TE85L,F) by Toshiba

RN1911FE(TE85L,F)

Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

NPN

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2506(TE85L,F) by Toshiba

RN2506(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; No. of Elements: 2;

.1 A

80

2

260

PNP

.3 W

BIP General Purpose Small Signal

YES

30

SILICON

RN2114(TE85L,F) by Toshiba

RN2114(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 50;

.1 A

50

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2117(TE85L,F) by Toshiba

RN2117(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.1 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2304(TE85L,F) by Toshiba

RN2304(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 80;

.1 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2307(TE85L,F) by Toshiba

RN2307(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;

.1 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2309(TE85L,F) by Toshiba

RN2309(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.1 A

70

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2313(TE85L,F) by Toshiba

RN2313(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2310(TE85L,F) by Toshiba

RN2310(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2311(TE85L,F) by Toshiba

RN2311(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2317(TE85L,F) by Toshiba

RN2317(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2511(TE85L,F) by Toshiba

RN2511(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN2704JE(TE85L,F) by Toshiba

RN2704JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2705JE(TE85L,F) by Toshiba

RN2705JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2706JE(TE85L,F) by Toshiba

RN2706JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2708JE(TE85L,F) by Toshiba

RN2708JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 2;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2607(TE85L,F) by Toshiba

RN2607(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON