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RN1709JE(TE85L,F)

Toshiba

RN1709JE(TE85L,F) by Toshiba

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70; Peak Reflow Temperature (C): 260;

Median Price

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Lifecycle Status

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Vyrian

USA . 1,141 parts In-Stock

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AZTECH Wire

Italy . 1,106 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,591 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1709JE(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

70

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

RN1709JE(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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