Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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BCR183E6433HTMA1
Infineon Technologies
Infineon's BCR183E6433HTMA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 200MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 1
.1 A
50 V
SINGLE WITH BUILT-IN RESISTOR
30
R-PDSO-G3
1
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
PNP
Not Qualified
YES
GULL WING
DUAL
SWITCHING
SILICON
200 MHz
BCR185E6327HTSA1
Infineon Technologies' BCR185E6327HTSA1 is a PNP BJT transistor with built-in resistor for switching applications. It has a min DC current gain of 70, max collector-emitter voltage of 50V, and nominal transition frequency of 200MHz. This surface-mount transistor comes in a small outline package with gull wing terminals.
BUILT-IN BIAS RESISTOR RATIO IS 4.7
70
e3
TIN
BCR185E6433HTMA1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
BCR192E6327HTSA1
BUILT-IN BIAS RESISTOR RATIO IS 2.1363
BCR521E6327HTSA1
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
.5 A
20
NPN
100 MHz
BCV29E6327HTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
COLLECTOR
30 V
DARLINGTON
4000
R-PSSO-F3
FLAT
SINGLE
150 MHz
BCV47E6433HTMA1
BCV47E6433HTMA1 by Infineon is a NPN Darlington BJT with 2000 hFE, 60V VCE, and 170MHz fT. Ideal for applications requiring high current gain and voltage amplification in compact electronic devices due to its small outline package and surface mount capability.
60 V
2000
170 MHz
BCW60BE6327HTSA1
Infineon BCW60BE6327HTSA1 is a NPN BJT transistor with hFE of 70, VCE of 32V, and fT of 250MHz. Ideal for switching applications due to its small outline package style and Gull Wing terminals. Suitable for surface mount designs requiring low collector current (0.1A).
32 V
250 MHz
BCW60CE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
90
BCW60DE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
100
BCW61AE6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
60
BCW61BE6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
80
BCW61DE6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 32 V;
110
BCW67BE6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
.8 A
BCW68FE6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR;
45 V
35
BCX41E6433HTMA1
BCX41E6433HTMA1 by Infineon Technologies is a NPN BJT transistor with hFE of 40, VCE of 125V, and IC of 0.8A. It is used for switching applications in surface mount designs due to its small outline package style and high transition frequency of 100MHz.
125 V
40
BCX42E6433HTMA1
Infineon BCX42E6433HTMA1 is a PNP BJT transistor for switching applications. Features include hFE of 40, VCE of 125V, and IC of 0.8A. With a fT of 150MHz, it's ideal for small outline surface mount designs requiring high-speed switching capabilities.
BCX52E6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Transistor Element Material: SILICON;
1 A
125 MHz
BCX53E6327HTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
80 V
BCX56E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Moisture Sensitivity Level (MSL): 1;
BCX70HE6327HTSA1
Infineon BCX70HE6327HTSA1 is a NPN BJT transistor with hFE of 70, VCE of 45V, and fT of 250MHz. Ideal for switching applications due to its small outline package, Gull Wing terminals, and surface mount capability.
BCX70HE6433HTMA1
Infineon BCX70HE6433HTMA1 is a NPN BJT transistor with hFE of 70, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it features a small outline package with gull wing terminals for surface mount assembly.
260
MATTE TIN
BCX70JE6433HTMA1
BCX70JE6433HTMA1 by Infineon Technologies is a NPN BJT transistor for switching applications. It has a min DC current gain of 90 and a max collector-emitter voltage of 45V. With a nominal transition frequency of 250MHz, it is ideal for surface mount designs requiring small outline packages.
BCX71KE6327HTSA1
BCX71KE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with a hFE of 110 and VCE of 45V, ideal for switching applications. It features a surface-mount Gull Wing package style with 3 terminals and silicon element material. With a transition frequency of 250MHz, it offers efficient performance in small outline designs.
BFN18E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
.2 A
300 V
150 Cel
70 MHz
SMBT3904E6433HTMA1
Infineon's SMBT3904E6433HTMA1 is a NPN BJT transistor with max. Vce of 40V, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its fast turn-on/off times and small outline package style. Suitable for surface mount designs with Gull Wing terminals in plastic/epoxy body material.
40 V
300 MHz
250 ns
70 ns
SMBTA06E6433HTMA1
SMBTA06E6433HTMA1 by Infineon is a NPN BJT transistor with max. collector-emitter voltage of 80V, ideal for amplifier applications. Featuring a min. DC current gain of 100 and max. operating temp of 150°C, it has a small outline package style suitable for surface mount assembly with Gull Wing terminals.
AMPLIFIER
BC857BWH6327
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Reference Standard: AEC-Q101;
LOW NOISE
220
AEC-Q101
BCV49E6327HTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
BCX5316E6327HTSA1
Matte Tin (Sn)
BC548CB1G
Taiwan Semiconductor
BC548CB1G by Taiwan Semiconductor is a NPN BJT with max power dissipation of 0.5W and min hFE of 420. It operates at up to 150°C, handles max IC of 0.1A, and has matte tin terminal finish. Ideal for small signal applications in various electronic circuits due to its single configuration and high DC current gain.
420
.5 W
Other Transistors
NO
10
BC549CB1G
BC549CB1G by Taiwan Semiconductor is a NPN BJT transistor with max. power dissipation of 0.5W, hFE of 420, and VCE of 30V. Ideal for switching applications due to its single configuration and through-hole terminal form in a cylindrical package style. Operating temp ranges from -65°C to 150°C making it suitable for various electronic devices.
TO-92
O-PBCY-T3
-65 Cel
ROUND
CYLINDRICAL
THROUGH-HOLE
BOTTOM
2SAR552PFRAT100
ROHM
ROHM 2SAR552PFRAT100 is a PNP BJT transistor with hFE of 200, VCE of 30V, and IC of 3A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and high transition frequency of 330MHz.
3 A
200
330 MHz
2SAR553PFRAT100
ROHM 2SAR553PFRAT100 is a PNP BJT transistor with hFE of 180, VCE of 50V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and fT of 320MHz.
2 A
180
320 MHz
2SCR512PFRAT100
ROHM's 2SCR512PFRAT100 is a NPN BJT transistor with hFE of 200, VCE of 30V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 320MHz.
2SCR554PFRAT100
ROHM 2SCR554PFRAT100 is a NPN BJT transistor with hFE of 120, VCE of 80V, and IC of 1.5A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 300MHz.
1.5 A
120
2N2907AUB1
STMicroelectronics
2N2907AUB1 by STMicroelectronics is a PNP BJT transistor for switching applications. With hFE of 50, Vce of 60V, and Ic of 0.5A, it offers fast ton of 45ns and toff of 300ns. This SMD transistor in small outline package is ideal for compact electronic designs.
50
R-XDSO-N3
e4
UNSPECIFIED
Gold (Au)
NO LEAD
300 ns
45 ns
2SA608NF-NPA-AT
Onsemi
The Onsemi 2SA608NF-NPA-AT is a PNP BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and max IC of 0.15A. Packaged in cylindrical shape with through-hole terminals for easy installation.
.15 A
160
TO-226AA
Tin (Sn)
2SC536NF-NPA-AT
2SC536NF-NPA-AT by Onsemi is a NPN BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Packaged in a cylindrical shape with through-hole terminals for easy installation.
MBT3906DW1T2G
MBT3906DW1T2G by Onsemi is a PNP BJT transistor with hFE of 100, fT of 250 MHz, and IC of 0.2 A. Ideal for surface mount applications with max temp of 150 °C, it's suitable for low-power amplification in electronic circuits.
.15 W
BC817K25E6327HTSA1
BC817K25E6327HTSA1 by Infineon is a NPN BJT transistor with hFE of 160, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 170MHz. It comes in a small outline package with gull wing terminals for surface mount assembly.
ZTX651QSTZ
Diodes Incorporated
ZTX651QSTZ by Diodes Inc. is a NPN BJT with 1.5W power dissipation, 100 hFE, and 2A collector current. Ideal for applications requiring high-speed switching in temperatures up to 200°C such as amplifiers and signal processing circuits.
200 Cel
1.5 W
140 MHz
ZX5T3ZTC
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 152 MHz; Maximum Collector Current (IC): 5.5 A; Package Style (Meter): SMALL OUTLINE;
HIGH RELIABILITY
5.5 A
152 MHz
FMMTA42QTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
50 MHz
2SA2205-E
The Onsemi 2SA2205-E is a PNP BJT transistor with hFE of 200, VCE of 100V, and IC of 2A. Ideal for switching applications, it operates up to 150 °C. Its silicon element and through-hole terminals make it suitable for high-frequency (300MHz) in-line package designs.
100 V
TO-251
R-PSIP-T3
e6
IN-LINE
Tin/Bismuth (Sn/Bi)
CPH5518-TL-E
CPH5518-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. It boasts a max power dissipation of 1.2W, min hFE of 200, and max IC of 1A. With an operating temp up to 150°C, it's suitable for various electronic circuits requiring high current amplification.
NPN AND PNP
1.2 W
BIP General Purpose Small Signals
TIN BISMUTH
2SA2127-AE
2SA2127-AE by Onsemi is a PNP BJT transistor with max. power dissipation of 1W, max. collector-emitter voltage of 50V, and max. collector current of 2A. Ideal for switching applications due to its single configuration and cylindrical package style, it has a min DC current gain of 40 and operates up to 150°C.
TO-226AE
1 W
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
420 MHz
2SB1216S-E
The Onsemi 2SB1216S-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. Packaged in plastic/epoxy, it has through-hole terminals and a power dissipation of 20W in an inline style package.
4 A
140
20 W
130 MHz
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