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BCR185E6327HTSA1

Infineon Technologies

BCR185E6327HTSA1 by Infineon Technologies

Infineon Technologies' BCR185E6327HTSA1 is a PNP BJT transistor with built-in resistor for switching applications. It has a min DC current gain of 70, max collector-emitter voltage of 50V, and nominal transition frequency of 200MHz. This surface-mount transistor comes in a small outline package with gull wing terminals.

Median Price

$0.216

Lifecycle Status

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Adafruit Industries

USA . 100 parts In-Stock

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$0.257

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Verical

USA . 72,000 parts In-Stock

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Chip1Stop

Japan . 21,000 parts In-Stock

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$0.134

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$0.134

Arrow

USA . 15,000 parts In-Stock

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$0.216

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Digiode

USA . 891 parts In-Stock

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$0.244

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891

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Nova Conductors

Japan . 60 parts In-Stock

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Chip Stock

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NAC Semi

USA . 18,000 parts In-Stock

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$0.127

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Vyrian

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TME

Poland . 6,565 parts In-Stock

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$0.072

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$0.055

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6,565

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Rutronik

Germany . 6,000 parts In-Stock

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$0.044

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VNN

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Ampacity Inc.

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Corphita

USA . 804 parts In-Stock

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$0.231

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Continental Prestige Electronics

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$0.252

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$0.246

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Argo Parts USA

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$0.244

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.257

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$0.257

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100

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Aztec Data Supply Inc.

USA . 307 parts In-Stock

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$0.346

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307

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Netroflash

USA . 1,000 parts In-Stock

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$0.420

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$0.412

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Corohmni

South Africa . 56 parts In-Stock

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$0.709

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Modulus Dynamics

Lithuania . 22,456 parts In-Stock

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$1.760

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$1.690

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$1.619

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AZTECH Wire

Italy . 81 parts In-Stock

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$19.720

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RC Electronics

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Component Stockers USA

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Eastek

USA . 24,000 parts In-Stock

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Overview

Upgrade your electronic projects with the BCR185E6327HTSA1 by Infineon Technologies. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers high performance and reliability in a compact package. Ideal for switching applications, this PNP transistor features a built-in resistor for added convenience. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 200MHz, this transistor delivers superior functionality. Trust in the quality of Infineon Technologies and unlock endless possibilities for your designs with the BCR185E6327HTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, ensuring durability and longevity.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for various electronic circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it convenient for compact electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures efficient and reliable performance in electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular shape of the package enables easy placement and orientation during assembly, contributing to a streamlined manufacturing process.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit connections and configurations, allowing for versatile usage.

Minimum DC Current Gain (hFE): 70

A high minimum DC current gain ensures consistent and stable amplification, making this transistor reliable in various applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can handle a wide range of voltage inputs, increasing its compatibility with different circuits.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, this transistor can support moderate power requirements in electronic circuits.

Terminal Finish: TIN

The tin terminal finish provides good solderability and conductivity, ensuring secure electrical connections in the circuit.

Terminal Position: DUAL

Dual terminal positions offer flexibility in PCB layout and allow for easy integration into various circuit designs.

Nominal Transition Frequency (fT): 200 MHz

With a high transition frequency of 200MHz, this transistor can operate at high frequencies, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR185E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR185E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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