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SMBTA06E6433HTMA1

Infineon Technologies

SMBTA06E6433HTMA1 by Infineon Technologies

SMBTA06E6433HTMA1 by Infineon is a NPN BJT transistor with max. collector-emitter voltage of 80V, ideal for amplifier applications. Featuring a min. DC current gain of 100 and max. operating temp of 150°C, it has a small outline package style suitable for surface mount assembly with Gull Wing terminals.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 47,720 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.059

10k+ parts

$0.052

47,720

-

$0.071

$0.059

$0.052

Verical

USA . 47,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.066

47,720

-

-

-

$0.066

Arrow

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.085

30,000

-

-

-

$0.085

Chip1Stop

Japan . 21,694 parts In-Stock

1+ parts

-

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-

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-

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21,694

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-

-

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Avnet

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.051

20,000

-

-

-

$0.051

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 621 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

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621

$0.034

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.147

100+ parts

-

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500

$0.147

-

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Vyrian

USA . 2,494 parts In-Stock

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2,494

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Distributors (Availability)

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Ampacity Inc.

Singapore . 72,389 parts In-Stock

1+ parts

$0.031

100+ parts

-

1k+ parts

-

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-

72,389

$0.031

-

-

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Corphita

USA . 274 parts In-Stock

1+ parts

$0.032

100+ parts

-

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274

$0.032

-

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Component Stockers USA

USA . 82,027 parts In-Stock

1+ parts

$0.050

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.020

82,027

$0.050

$0.040

$0.040

$0.020

Continental Prestige Electronics

USA . 5,391 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

-

10k+ parts

$0.144

5,391

$0.147

-

-

$0.144

Argo Parts USA

USA . 3,019 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

-

10k+ parts

$0.142

3,019

$0.147

-

-

$0.142

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.147

100+ parts

-

1k+ parts

$0.139

10k+ parts

$0.136

50

$0.147

-

$0.139

$0.136

Modulus Dynamics

Lithuania . 6,683 parts In-Stock

1+ parts

$1.474

100+ parts

$1.415

1k+ parts

$1.356

10k+ parts

-

6,683

$1.474

$1.415

$1.356

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AZTECH Wire

Italy . 951 parts In-Stock

1+ parts

$19.370

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951

$19.370

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QUARKTWIN TECHNOLOGY LTD

USA . 12,924 parts In-Stock

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12,924

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Perfect Parts

USA . 283 parts In-Stock

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283

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Overview

Unleash the power of innovation with the SMBTA06E6433HTMA1 by Infineon Technologies, a leading manufacturer known for its superior quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is designed to amplify signals with precision, making it ideal for a wide range of applications. With its NPN polarity and single configuration, this transistor offers exceptional performance and efficiency. Experience seamless integration with its surface mount design and gull-wing terminals. Trust in the value and benefits that this product provides, from its high DC current gain to its maximum operating temperature of 150°C. Elevate your projects to new heights with the SMBTA06E6433HTMA1 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight material which helps in reducing overall weight of the product.

Polarity or Channel Type: NPN

Commonly used type of transistor for amplification purposes.

Configuration: SINGLE

Simplified design with only one transistor in the package.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance.

Surface Mount: YES

Ease of installation on circuit boards and space-saving benefits.

Package Shape: RECTANGULAR

Standard shape for easy integration into existing circuit designs.

Terminal Form: GULL WING

Provides a secure connection and easy soldering process.

No. of Terminals: 3

Simplified setup with fewer connections required.

Package Style (Meter): SMALL OUTLINE

Compact size suitable for small electronic devices.

Minimum DC Current Gain (hFE): 100

High gain ensures efficient amplification of signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 80 V

Safe voltage rating for collector-emitter circuit.

Transistor Element Material: SILICON

Commonly used material known for its reliability and durability.

Maximum Collector Current (IC): 0.5 A

Adequate collector current rating for many small signal applications.

Terminal Position: DUAL

Allows for easy connection to external components.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency for efficient signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBTA06E6433HTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SMBTA06E6433HTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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