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SMBT3906DW1T1G

Onsemi

SMBT3906DW1T1G by Onsemi

SMBT3906DW1T1G by Onsemi is a PNP BJT transistor with hFE of 100, fT of 250 MHz, and IC of 0.2 A. Ideal for small signal applications in electronics due to its surface mount capability and max operating temperature of 150°C.

Median Price

$0.176

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 29,981 parts In-Stock

1+ parts

$0.176

100+ parts

$0.172

1k+ parts

$0.167

10k+ parts

$0.164

29,981

$0.176

$0.172

$0.167

$0.164

Mouser Electronics

USA . 12,369 parts In-Stock

1+ parts

$0.430

100+ parts

$0.193

1k+ parts

$0.156

10k+ parts

-

12,369

$0.430

$0.193

$0.156

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DigiKey

USA . 5,695 parts In-Stock

1+ parts

$0.560

100+ parts

$0.218

1k+ parts

$0.146

10k+ parts

$0.105

5,695

$0.560

$0.218

$0.146

$0.105

Flip Electronics (Authorized)

USA . 30,000 parts In-Stock

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30,000

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Verical

USA . 29,906 parts In-Stock

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$0.146

10k+ parts

$0.104

29,906

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-

$0.146

$0.104

Chip1Stop

Japan . 2,525 parts In-Stock

1+ parts

-

100+ parts

$0.072

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2,525

-

$0.072

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Greenchips

USA . 2,070 parts In-Stock

1+ parts

$0.121

100+ parts

$0.115

1k+ parts

$0.110

10k+ parts

$0.099

2,070

$0.121

$0.115

$0.110

$0.099

Nova Conductors

Japan . 80 parts In-Stock

1+ parts

$0.153

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80

$0.153

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Digiode

USA . 1,512 parts In-Stock

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$0.266

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1,512

$0.266

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NAC Semi

USA . 54,000 parts In-Stock

1+ parts

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$0.173

54,000

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$0.173

Flip Electronics

USA . 30,000 parts In-Stock

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-

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30,000

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Chip Stock

USA . 26,000 parts In-Stock

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Vyrian

USA . 21,061 parts In-Stock

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21,061

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Cyclops Electronics Ltd

UK . 2,770 parts In-Stock

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2,770

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SIE Connect GmbH - GreenChips

Germany . 2,070 parts In-Stock

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2,070

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 23,141 parts In-Stock

1+ parts

$0.066

100+ parts

$0.064

1k+ parts

$0.064

10k+ parts

-

23,141

$0.066

$0.064

$0.064

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Ampacity Inc.

Singapore . 21,229 parts In-Stock

1+ parts

$0.066

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21,229

$0.066

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Corohmni

South Africa . 304 parts In-Stock

1+ parts

$0.114

100+ parts

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304

$0.114

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Argo Parts USA

USA . 3,714 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

-

10k+ parts

$0.148

3,714

$0.153

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-

$0.148

Continental Prestige Electronics

USA . 762 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

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10k+ parts

$0.150

762

$0.153

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$0.150

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.153

100+ parts

$0.150

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100

$0.153

$0.150

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.156

100+ parts

$0.156

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$0.156

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2,000

$0.156

$0.156

$0.156

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Corphita

USA . 153 parts In-Stock

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$0.252

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153

$0.252

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Aztec Data Supply Inc.

USA . 450 parts In-Stock

1+ parts

$0.564

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450

$0.564

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Perfect Parts

USA . 241,808 parts In-Stock

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GreenTree Electronics

Israel . 54,000 parts In-Stock

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54,000

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Authorized Procurement Solutions

USA . 53,900 parts In-Stock

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53,900

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Eastek

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,014 parts In-Stock

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Problanco Electronics

Mexico . 8,082 parts In-Stock

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TANS Electronics

Latvia . 3,451 parts In-Stock

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Kulean Microsystems

USA . 2,989 parts In-Stock

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2,989

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Lixinc

USA . 1,621 parts In-Stock

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1,621

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SupplyDigital Components

Austria . 1,433 parts In-Stock

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1,433

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UHIMA Technologies

Türkiye . 117 parts In-Stock

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117

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Overview

Enhance your electronic designs with the SMBT3906DW1T1G PNP Bipolar Junction Transistor by Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient solutions for a wide range of applications in the small signal BJT category. With a minimum DC current gain of 100 and a maximum collector current of 0.2A, this surface-mount transistor offers superior performance and durability. Whether you're working on audio amplifiers, signal processing circuits, or voltage regulators, the SMBT3906DW1T1G provides the value, benefits, and advantages that customers need to succeed in their projects. Elevate your designs with Onsemi's trusted components today.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching applications, making this product suitable for applications requiring fast response times.

Surface Mount: YES

Surface mount technology allows for easy integration onto circuit boards, saving space and simplifying the manufacturing process.

Maximum Power Dissipation (Abs): 0.15 W

With a low maximum power dissipation, this transistor is energy-efficient and can handle lower power applications effectively.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures consistent and reliable amplification of signals in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows this transistor to operate reliably in a wide range of temperature environments.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate current levels in circuits without overheating.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

The quick reflow time of 30 seconds at peak temperature allows for efficient and reliable soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260°C ensures that the transistor can withstand the soldering process without damage.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency applications such as RF amplification and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBT3906DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

100

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

SMBT3906DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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