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SMBTA92E6327HTSA1

Infineon Technologies

SMBTA92E6327HTSA1 by Infineon Technologies

SMBTA92E6327HTSA1 by Infineon Tech is a PNP BJT transistor with max VCE of 300V, IC of 0.5A, and hFE of 25. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and temp range up to 150°C. Features Gull Wing terminals in a small outline package style.

Median Price

$0.059

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$0.595

100+ parts

$0.566

1k+ parts

$0.566

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1,000

$0.595

$0.566

$0.566

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Avnet

USA . 1,053,000 parts In-Stock

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$0.059

1,053,000

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$0.059

Verical

USA . 240,000 parts In-Stock

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240,000

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Arrow

USA . 6,000 parts In-Stock

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$0.054

6,000

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$0.054

Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.116

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-

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15

$0.116

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Digiode

USA . 131 parts In-Stock

1+ parts

$0.332

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131

$0.332

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Vyrian

USA . 261,810 parts In-Stock

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261,810

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Rutronik

Germany . 21,000 parts In-Stock

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$0.068

21,000

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$0.068

NAC Semi

USA . 9,000 parts In-Stock

1+ parts

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$0.192

9,000

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-

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$0.192

Schukat

Germany . 4,700 parts In-Stock

1+ parts

-

100+ parts

$0.090

1k+ parts

$0.067

10k+ parts

$0.053

4,700

-

$0.090

$0.067

$0.053

Bristol Electronics

USA . 2,008 parts In-Stock

1+ parts

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2,008

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Distributors (Availability)

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Semicontronic

India . 261,831 parts In-Stock

1+ parts

$0.044

100+ parts

$0.043

1k+ parts

$0.043

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261,831

$0.044

$0.043

$0.043

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Ampacity Inc.

Singapore . 261,558 parts In-Stock

1+ parts

$0.044

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261,558

$0.044

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Continental Prestige Electronics

USA . 6,957 parts In-Stock

1+ parts

$0.116

100+ parts

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$0.113

6,957

$0.116

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$0.113

Argo Parts USA

USA . 2,858 parts In-Stock

1+ parts

$0.116

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$0.112

2,858

$0.116

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$0.112

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.116

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$0.116

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Corphita

USA . 602 parts In-Stock

1+ parts

$0.315

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602

$0.315

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Corohmni

South Africa . 1,000 parts In-Stock

1+ parts

$0.339

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1,000

$0.339

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Component Stockers USA

USA . 29,086 parts In-Stock

1+ parts

$0.460

100+ parts

$0.080

1k+ parts

$0.070

10k+ parts

$0.050

29,086

$0.460

$0.080

$0.070

$0.050

Modulus Dynamics

Lithuania . 1,612 parts In-Stock

1+ parts

$0.522

100+ parts

$0.501

1k+ parts

$0.480

10k+ parts

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1,612

$0.522

$0.501

$0.480

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.595

100+ parts

$0.566

1k+ parts

$0.566

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1,000

$0.595

$0.566

$0.566

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Aztec Data Supply Inc.

USA . 246 parts In-Stock

1+ parts

$1.440

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246

$1.440

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Andel Nordic

Denmark . 4,722 parts In-Stock

1+ parts

$53.940

100+ parts

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$37.755

10k+ parts

$37.755

4,722

$53.940

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$37.755

$37.755

RC Electronics

USA . 130,987 parts In-Stock

1+ parts

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$0.100

1k+ parts

$0.090

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$0.090

130,987

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$0.100

$0.090

$0.090

Perfect Parts

USA . 91,594 parts In-Stock

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91,594

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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4,800

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Overview

Enhance your electronic devices with the SMBTA92E6327HTSA1 Small Signal Bipolar Junction Transistor by Infineon Technologies. Known for their high-quality components, Infineon delivers reliable and efficient solutions for a variety of applications. This PNP transistor offers a maximum collector-emitter voltage of 300V and a minimum DC current gain of 25, ensuring optimal performance in your circuit designs. Trust in the value and benefits that this transistor brings to your projects, providing you with the competitive edge you need in today's fast-paced market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components, making the transistor suitable for various environments.

Polarity or Channel Type: PNP

Allows for easy integration with PNP circuit configurations, enhancing compatibility in circuit designs.

Configuration: SINGLE

Simplified design with a single configuration, reducing complexity in circuit layout and troubleshooting.

Surface Mount: YES

Enables efficient and space-saving surface mount assembly on circuit boards, ideal for compact electronic devices.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment during assembly on circuit boards, improving manufacturing efficiency.

No. of Terminals: 3

Provides essential connections for circuit integration while keeping the design streamlined and compact.

Minimum DC Current Gain (hFE): 25

Ensures stable and reliable amplification of signals in various applications, offering consistent performance.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making the transistor suitable for industrial and automotive applications with elevated heat levels.

Maximum Collector-Emitter Voltage: 300 V

Supports high voltage applications, expanding the range of potential uses for the transistor.

Transistor Element Material: SILICON

Delivers reliable performance and efficiency due to the semiconductor properties of silicon, ensuring long-term functionality.

Maximum Collector Current (IC): 0.5 A

Handles moderate current levels, suitable for small signal amplification and control in a variety of electronic circuits.

Terminal Finish: TIN

Provides a stable and corrosion-resistant terminal finish, ensuring reliable connections for extended product lifespan.

Terminal Position: DUAL

Offers flexibility in circuit layout and connection options, allowing for versatile integration in different circuit designs.

Nominal Transition Frequency (fT): 50 MHz

Provides a high frequency capability, suitable for applications requiring fast signal switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBTA92E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SMBTA92E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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