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SMBT2907AE6327XT

Infineon Technologies

SMBT2907AE6327XT by Infineon Technologies

SMBT2907AE6327XT by Infineon is a PNP BJT transistor for switching applications. Features include hFE of 50, VCEO of 60V, and fT of 200MHz. With Gull Wing terminals and small outline package, it operates at up to 150°C making it suitable for various electronic devices.

Median Price

$0.039

Lifecycle Status

EOL

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 36,000 parts In-Stock

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$0.039

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$0.039

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Vyrian

USA . 35,613 parts In-Stock

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35,613

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Digiode

USA . 996 parts In-Stock

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996

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 35,629 parts In-Stock

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$0.033

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35,629

$0.033

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Modulus Dynamics

Lithuania . 24 parts In-Stock

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$0.966

100+ parts

$0.927

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$0.889

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24

$0.966

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$0.889

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Continental Prestige Electronics

USA . 6,910 parts In-Stock

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Argo Parts USA

USA . 2,687 parts In-Stock

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Corphita

USA . 271 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Upgrade your electronic devices with the SMBT2907AE6327XT from Infineon Technologies, a top-tier manufacturer known for their high-quality components. These Small Signal Bipolar Junction Transistors (BJT) are perfect for switching applications, offering reliable performance and durability. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 200 MHz, this PNP transistor is designed to deliver superior functionality. Trust in Infineon Technologies to provide you with the innovative solutions you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY is a durable material that provides good protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can easily control current flow, making this transistor suitable for such applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to incorporate this transistor into electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in quickly turning on and off current flow.

Surface Mount: YES

The surface mount option allows for easy and convenient assembly onto circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular shape of the package helps in easy placement and alignment on circuit boards, ensuring efficient usage of space.

Terminal Form: GULL WING

The GULL WING terminal form provides strong mechanical support and allows for easy soldering onto circuit boards, ensuring reliable connections.

No. of Terminals: 3

With 3 terminals, this transistor is easy to integrate into circuits and offers flexibility in connecting to other components.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the overall size of the transistor, making it suitable for compact electronic devices or tight spaces.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures stable and consistent amplification of current, providing reliable performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 60 V

The 60V maximum collector-emitter voltage rating ensures that the transistor can handle higher voltage levels, providing protection against voltage spikes or surges.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its high reliability and efficiency in electronic circuits, ensuring stable performance.

Maximum Turn On Time (ton): 50 ns

The fast turn-on time of 50 nanoseconds allows for quick response in switching applications, ensuring efficient operation.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6 amps, this transistor can handle moderate current levels, making it suitable for a wide range of applications.

Maximum Turn Off Time (toff): 110 ns

The maximum turn-off time of 110 nanoseconds ensures fast switching speed and helps in reducing power losses in switching circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and prevents oxidation, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

The dual terminal position allows for easy and secure connection of the transistor in circuit layouts, ensuring stable electrical connections.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200 MHz, this transistor offers high-speed performance in amplification and switching applications, making it suitable for high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBT2907AE6327XT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

110 ns

Maximum Turn On Time (ton):

50 ns

Trade Compliance

SMBT2907AE6327XT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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