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SMBT3906E6327HTSA1

Infineon Technologies

SMBT3906E6327HTSA1 by Infineon Technologies

SMBT3906E6327HTSA1 by Infineon Technologies is a PNP BJT transistor with 80 min hFE, 40V VCEO, and 250MHz fT. Ideal for switching applications, it operates at up to 150°C and features GULL WING terminals in a SMALL OUTLINE package.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,528 parts In-Stock

1+ parts

$0.290

100+ parts

$0.112

1k+ parts

$0.073

10k+ parts

$0.055

7,528

$0.290

$0.112

$0.073

$0.055

Arrow

USA . 324,000 parts In-Stock

1+ parts

-

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$0.038

324,000

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$0.038

Verical

USA . 324,000 parts In-Stock

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$0.038

324,000

-

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-

$0.038

Rochester

USA . 142,000 parts In-Stock

1+ parts

-

100+ parts

$0.049

1k+ parts

$0.040

10k+ parts

$0.036

142,000

-

$0.049

$0.040

$0.036

Avnet

USA . 69,000 parts In-Stock

1+ parts

-

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$0.035

69,000

-

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$0.035

Chip1Stop

Japan . 44,389 parts In-Stock

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44,389

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Distributors (In-Stock)

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Digiode

USA . 581 parts In-Stock

1+ parts

$0.030

100+ parts

-

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581

$0.030

-

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.076

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870

$0.076

-

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TME

Poland . 1,420 parts In-Stock

1+ parts

$0.170

100+ parts

$0.077

1k+ parts

$0.051

10k+ parts

$0.047

1,420

$0.170

$0.077

$0.051

$0.047

Vyrian

USA . 66,970 parts In-Stock

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66,970

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Chip Stock

USA . 46,300 parts In-Stock

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46,300

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Semi Source

USA . 28,186 parts In-Stock

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28,186

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.125

6,000

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$0.125

Greenchips

USA . 4,450 parts In-Stock

1+ parts

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4,450

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Bristol Electronics

USA . 1,277 parts In-Stock

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1,277

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Distributors (Availability)

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Ampacity Inc.

Singapore . 64,981 parts In-Stock

1+ parts

$0.027

100+ parts

-

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64,981

$0.027

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Semicontronic

India . 64,910 parts In-Stock

1+ parts

$0.027

100+ parts

$0.026

1k+ parts

$0.026

10k+ parts

-

64,910

$0.027

$0.026

$0.026

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Corphita

USA . 192 parts In-Stock

1+ parts

$0.029

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192

$0.029

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Advanced Electronics

New Zealand . 41 parts In-Stock

1+ parts

$0.066

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$0.066

1k+ parts

$0.066

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-

41

$0.066

$0.066

$0.066

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Continental Prestige Electronics

USA . 4,741 parts In-Stock

1+ parts

$0.076

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$0.075

4,741

$0.076

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-

$0.075

Argo Parts USA

USA . 2,069 parts In-Stock

1+ parts

$0.076

100+ parts

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1k+ parts

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$0.074

2,069

$0.076

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-

$0.074

Aztec Data Supply Inc.

USA . 305 parts In-Stock

1+ parts

$1.349

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305

$1.349

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Modulus Dynamics

Lithuania . 21,803 parts In-Stock

1+ parts

$1.437

100+ parts

$1.380

1k+ parts

$1.322

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-

21,803

$1.437

$1.380

$1.322

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Corohmni

South Africa . 20 parts In-Stock

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$1.828

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20

$1.828

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Perfect Parts

USA . 100,667 parts In-Stock

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Eastek

USA . 30,000 parts In-Stock

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Glotronic Ltd.

UK . 20,000 parts In-Stock

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GreenTree Electronics

Israel . 1,997 parts In-Stock

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1,997

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Netroflash

USA . 100 parts In-Stock

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100+ parts

$0.075

1k+ parts

$0.072

10k+ parts

$0.071

100

-

$0.075

$0.072

$0.071

Overview

Upgrade your electronic devices with the SMBT3906E6327HTSA1 from Infineon Technologies. This high-quality Small Signal Bipolar Junction Transistor (BJT) offers unmatched performance and reliability for switching applications. With Infineon's reputation for excellence in semiconductor manufacturing, you can trust that this PNP transistor will deliver exceptional results. Whether you're designing consumer electronics, automotive systems, or industrial equipment, this surface mount transistor is the perfect choice. Experience the value and benefits of using the SMBT3906E6327HTSA1 in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation properties, making the transistor more reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switch configurations, making this transistor suitable for various switching applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and reduces the overall complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in switching circuits.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on a PCB, saving space and improving overall circuit layout.

Package Shape: RECTANGULAR

RECTANGULAR shape is conducive to efficient PCB layout and soldering processes.

Terminal Form: GULL WING

GULL WING terminals provide secure mounting and facilitate proper soldering.

No. of Terminals: 3

Having 3 terminals allows for easy connection and integration within a circuit.

Package Style (Meter): SMALL OUTLINE

SMALL OUTLINE package style saves space on the PCB and enhances portability of the final product.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures consistent and reliable amplification in various applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures reliable performance under various operating conditions.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage allows for handling higher voltage applications.

Transistor Element Material: SILICON

Silicon material provides high performance and conductivity, making the transistor suitable for various applications.

Maximum Turn On Time (ton): 70 ns

Fast turn on time ensures quick response and efficient operation in switching applications.

Maximum Collector Current (IC): 0.2 A

Maximum collector current of 0.2 A allows for handling moderate current levels in various applications.

Maximum Turn Off Time (toff): 300 ns

Fast turn off time ensures quick switching and efficient operation in switching circuits.

Terminal Finish: TIN

TIN terminal finish provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and layout.

Nominal Transition Frequency (fT): 250 MHz

High nominal transition frequency allows for high-speed switching and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBT3906E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

SMBT3906E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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