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SMBTA06UPNE6327HT

Infineon Technologies

SMBTA06UPNE6327HT by Infineon Technologies

Infineon's SMBTA06UPNE6327HT is a Small Signal BJT with NPN and PNP types, 2 elements in separate configuration. With hFE of 100, it operates up to 150°C, handles max 80V VCE, and supports 0.5A IC. Ideal for applications requiring high-frequency switching in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,285 parts In-Stock

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1,285

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Digiode

USA . 262 parts In-Stock

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262

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 500 parts In-Stock

1+ parts

$1.083

100+ parts

$1.040

1k+ parts

$0.996

10k+ parts

-

500

$1.083

$1.040

$0.996

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AZTECH Wire

Italy . 670 parts In-Stock

1+ parts

$4.962

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670

$4.962

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Ampacity Inc.

Singapore . 1,239 parts In-Stock

1+ parts

$28.050

100+ parts

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1,239

$28.050

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Continental Prestige Electronics

USA . 2,054 parts In-Stock

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2,054

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Corphita

USA . 646 parts In-Stock

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646

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Argo Parts USA

USA . 518 parts In-Stock

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518

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Upgrade your electronic projects with the SMBTA06UPNE6327HT by Infineon Technologies! Known for their exceptional quality and reliability, Infineon Technologies has crafted this Small Signal Bipolar Junction Transistor (BJT) to deliver superior performance in a variety of applications. With its NPN and PNP configuration, Gull Wing terminal form, and high DC current gain, this transistor offers unmatched value and benefits to customers. Whether you're a seasoned tech enthusiast or a DIY hobbyist, this product is sure to elevate your designs to the next level. Upgrade to the SMBTA06UPNE6327HT today and experience the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it more durable and reliable.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in circuit design as it can be used for both NPN and PNP transistor configurations.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of each transistor element, enhancing versatility in circuit applications.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in various operating conditions.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring higher voltage levels, providing versatility in circuit design.

Minimum DC Current Gain (hFE): 100

Ensures consistent and stable amplification of the input signal, improving overall performance.

Nominal Transition Frequency (fT): 100 MHz

Offers fast response times and high-frequency capabilities, suitable for applications requiring high-speed signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBTA06UPNE6327HT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SMBTA06UPNE6327HT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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