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SMBT2222A

Infineon Technologies

SMBT2222A by Infineon Technologies

SMBT2222A by Infineon Technologies is a NPN BJT transistor for switching applications. With a max collector-emitter voltage of 40V, it has a min DC current gain of 40 and can handle up to 0.6A collector current. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.070

Lifecycle Status

EOL

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.070

100+ parts

$0.073

1k+ parts

$0.069

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3,000

$0.070

$0.073

$0.069

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Chip Stock

USA . 21,500 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 6,005 parts In-Stock

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Prism Electronics

USA . 5,799 parts In-Stock

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J & M Industries LLC

USA . 3,228 parts In-Stock

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3,228

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Bristol Electronics

USA . 3,000 parts In-Stock

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3,000

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ComSIT Distribution GmbH

Germany . 2,985 parts In-Stock

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2,985

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Semtec, LLC

USA . 2,750 parts In-Stock

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2,750

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BCID Electronics Ltd.

Israel . 2,740 parts In-Stock

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2,740

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Manoshevitz Elec. Sales

Israel . 2,300 parts In-Stock

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Semi Source

USA . 2,070 parts In-Stock

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2,070

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Vyrian

USA . 1,522 parts In-Stock

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EMSNET

USA . 1,200 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 402 parts In-Stock

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402

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Digiode

USA . 188 parts In-Stock

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188

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Nova Conductors

Japan . 36 parts In-Stock

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Electronics Depot

USA . 20 parts In-Stock

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20

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Sensible Micro Corp

USA . 7 parts In-Stock

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7

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NPI Materials, Inc.

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 111 parts In-Stock

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$0.420

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111

$0.420

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Modulus Dynamics

Lithuania . 4,611 parts In-Stock

1+ parts

$0.877

100+ parts

$0.842

1k+ parts

$0.807

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4,611

$0.877

$0.842

$0.807

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Corohmni

South Africa . 43 parts In-Stock

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$1.556

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43

$1.556

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AZTECH Wire

Italy . 346 parts In-Stock

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$11.290

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346

$11.290

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Ampacity Inc.

Singapore . 1,252 parts In-Stock

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$42.050

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$42.050

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Semicontronic

India . 240 parts In-Stock

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$49.050

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$47.824

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$47.578

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240

$49.050

$47.824

$47.578

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Andel Nordic

Denmark . 5,455 parts In-Stock

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$53.980

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$37.784

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$37.784

5,455

$53.980

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$37.784

$37.784

RC Electronics

USA . 11,700 parts In-Stock

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$0.080

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$0.080

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$0.080

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$0.080

$0.080

$0.080

A-Z Elektronik GmbH

Germany . 7,113 parts In-Stock

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Perfect Parts

USA . 6,485 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,579 parts In-Stock

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Argo Parts USA

USA . 1,216 parts In-Stock

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Assy Fe

Spain . 1,025 parts In-Stock

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Kepictronics

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Cyclops Electronics Ltd (Excess)

UK . 402 parts In-Stock

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402

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Corphita

USA . 346 parts In-Stock

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346

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Upgrade your electronics with the SMBT2222A by Infineon Technologies. With high-quality manufacturing and a reputation for excellence, this Small Signal Bipolar Junction Transistor offers reliable performance in switching applications. Its NPN configuration and small outline package make it ideal for various projects. Experience the value of fast turn-on times, low power dissipation, and high collector current capabilities. Trust Infineon Technologies to deliver top-notch components for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY:

The use of plastic/epoxy material for the package body provides a good balance between durability and cost-effectiveness.

Polarity or Channel Type: NPN:

NPN transistor configuration allows for high switching speeds and efficient amplification, making it suitable for a wide range of applications.

Configuration: SINGLE:

Single configuration simplifies circuit design and ensures easy integration into electronic systems.

Transistor Application: SWITCHING:

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation.

Surface Mount: YES:

Being surface mount compatible, this transistor is easy to solder onto PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR:

Rectangular package shape offers versatility in mounting options and allows for compact designs.

Terminal Form: GULL WING:

Gull wing terminal form provides secure electrical connections and ease of soldering during assembly.

No. of Terminals: 3:

With 3 terminals, this transistor offers flexibility in circuit configurations and applications.

Maximum Power Dissipation (Abs): 0.33 W:

A maximum power dissipation of 0.33W ensures reliable performance under varying operating conditions.

Package Style (Meter): SMALL OUTLINE:

Featuring a small outline package style, this transistor is ideal for applications with space constraints.

Minimum DC Current Gain (hFE): 40:

With a minimum DC current gain of 40, this transistor ensures consistent amplification and stable performance.

Maximum Operating Temperature: 150 °C:

Operating at a maximum temperature of 150°C, this transistor is suitable for high-temperature environments.

Maximum Collector-Emitter Voltage: 40 V:

The maximum collector-emitter voltage of 40V allows for safe operation within specified voltage limits.

Transistor Element Material: SILICON:

Silicon material offers high reliability and performance for extended use in various applications.

Maximum Turn On Time (ton): 35 ns:

Fast turn-on time of 35ns ensures rapid response in switching applications.

Maximum Collector Current (IC): 0.6 A:

With a maximum collector current of 0.6A, this transistor can handle moderate power loads.

Maximum Turn Off Time (toff): 285 ns:

The maximum turn-off time of 285ns ensures efficient switching performance with minimal delays.

Terminal Finish: MATTE TIN:

Matte tin terminal finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: DUAL:

Dual terminal position allows for easy implementation and connectivity in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 40:

With a maximum time of 40 seconds at peak reflow temperature, this transistor ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260:

Peak reflow temperature of 260°C enables secure solder joints and ensures long-term reliability.

Nominal Transition Frequency (fT): 300 MHz:

Nominal transition frequency of 300MHz indicates high-speed performance and signal processing capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBT2222A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

SMBT2222A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-478-8778, 5961014788778

NIIN

014788778

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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