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SMBT2222AE6327

Infineon Technologies

SMBT2222AE6327 by Infineon Technologies

Infineon's SMBT2222AE6327 is a NPN BJT transistor for switching applications. With max VCEsat of 1V, it has tr of 25ns and tf of 60ns. This GULL WING terminal transistor operates at max temp of 150°C, with IC of 0.6A and hFE of 40, making it suitable for high-speed switching circuits.

Median Price

$0.272

Lifecycle Status

EOL

Suppliers In-Stock

36

In-Stock Inventory

1k+

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Mouser Electronics

USA . 195,817 parts In-Stock

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$0.460

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$0.202

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$0.073

Adafruit Industries

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Bürklin Elektronik

Germany . 130 parts In-Stock

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$0.083

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TEDSS.com

USA . 32,674 parts In-Stock

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Freelance Electronics

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Digiode

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Component Electronics Inc.

Canada . 2,807 parts In-Stock

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Vyrian

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ComSIT Distribution GmbH

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LIBRA Elektronik GmbH

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SPM Sales

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PC Components Company LLC

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Speed Components Ltd

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Sogenti Electronics

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Rebound Electronics

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Nova Conductors

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Sea View Technologies

USA . 497 parts In-Stock

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Component Sense

UK . 493 parts In-Stock

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Ampacity Inc.

Singapore . 74,286 parts In-Stock

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Semicontronic

India . 72,513 parts In-Stock

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Corphita

USA . 743 parts In-Stock

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Modulus Dynamics

Lithuania . 7,672 parts In-Stock

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$0.765

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Aztec Data Supply Inc.

USA . 4,710 parts In-Stock

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Corohmni

South Africa . 472 parts In-Stock

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Andel Nordic

Denmark . 4,324 parts In-Stock

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Formix International (Excess)

India . 168,086 parts In-Stock

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Speed Components Ltd (Excess)

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Argo Parts USA

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Authorized Procurement Solutions

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Lixinc

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GreenTree Electronics

Israel . 2,800 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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Metaverse IC Inc.

Canada . 2,120 parts In-Stock

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Kepictronics

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Bastille Electronics

Australia . 800 parts In-Stock

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Continental Prestige Electronics

USA . 65 parts In-Stock

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Overview

Upgrade your electronics with the SMBT2222AE6327 by Infineon Technologies. This high-quality Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering fast rise and fall times for efficient performance. With a maximum VCEsat of 1V and a minimum DC current gain of 40, this NPN transistor provides reliable operation at a maximum collector-emitter voltage of 40V. Its compact rectangular package and gull wing terminals make it easy to mount on any surface, while its maximum power dissipation of 0.33W ensures long-lasting durability. Trust Infineon Technologies for superior quality and performance in your next electronics project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: NPN

Commonly used type with many applications in electronics.

Configuration: SINGLE

Simplified design for straightforward implementation in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering efficient performance in this use case.

Surface Mount: YES

Offers easy and convenient mounting on circuit boards for streamlined production processes.

Maximum Rise Time (tr): 25 ns

Fast rise time allows for quick switching operations, enhancing overall performance.

Maximum VCEsat: 1 V

Low collector-emitter saturation voltage minimizes power loss and improves efficiency.

Maximum Power Dissipation (Abs): 0.33 W

Can handle power dissipation efficiently, making it suitable for various applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance or longevity.

Maximum Collector-Emitter Voltage: 40 V

Can handle relatively high voltage levels, expanding its range of potential uses.

Maximum Collector Current (IC): 0.6 A

Able to carry moderate current levels, suitable for many circuit requirements.

Nominal Transition Frequency (fT): 300 MHz

High frequency capability allows for fast switching speeds and high-performance applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBT2222AE6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

Maximum Fall Time (tf):

60 ns

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

25 ns

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

1 V

Trade Compliance

SMBT2222AE6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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