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BC817K25E6327HTSA1

Infineon Technologies

BC817K25E6327HTSA1 by Infineon Technologies

BC817K25E6327HTSA1 by Infineon is a NPN BJT transistor with hFE of 160, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 170MHz. It comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 658 parts In-Stock

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$0.520

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$0.231

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$0.127

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$0.111

658

$0.520

$0.231

$0.127

$0.111

Chip1Stop

Japan . 9,000 parts In-Stock

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$0.036

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$0.036

Verical

USA . 6,000 parts In-Stock

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$0.057

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$0.057

Farnell

UK . 6,000 parts In-Stock

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$0.046

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Arrow

USA . 3,000 parts In-Stock

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$0.038

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Digiode

USA . 205 parts In-Stock

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$0.028

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$0.028

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Nova Conductors

Japan . 35 parts In-Stock

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$0.055

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$0.055

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TME

Poland . 48,000 parts In-Stock

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$0.043

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NAC Semi

USA . 24,000 parts In-Stock

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$0.123

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Rutronik

Germany . 9,000 parts In-Stock

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$0.045

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Vyrian

USA . 2,101 parts In-Stock

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Ashlea Components Ltd

UK . 1,500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,100 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,100 parts In-Stock

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Sensible Micro Corp

USA . 463 parts In-Stock

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VNN

France . 75 parts In-Stock

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Ampacity Inc.

Singapore . 46,805 parts In-Stock

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$0.024

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$0.024

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Corphita

USA . 177 parts In-Stock

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$0.026

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177

$0.026

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Argo Parts USA

USA . 3,655 parts In-Stock

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$0.055

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$0.054

3,655

$0.055

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$0.054

Continental Prestige Electronics

USA . 2,525 parts In-Stock

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$0.055

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$0.054

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$0.055

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Modulus Dynamics

Lithuania . 24,904 parts In-Stock

1+ parts

$0.073

100+ parts

$0.070

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$0.067

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24,904

$0.073

$0.070

$0.067

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Corohmni

South Africa . 230 parts In-Stock

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$0.073

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$0.073

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.994

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$0.905

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$0.815

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200

$0.994

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$0.815

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Perfect Parts

USA . 346,743 parts In-Stock

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Glotronic Ltd.

UK . 160,800 parts In-Stock

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GreenTree Electronics

Israel . 150,000 parts In-Stock

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Eastek

USA . 51,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,412 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.054

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$0.053

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$0.052

2,000

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$0.054

$0.053

$0.052

Overview

Discover the power of Infineon Technologies with the BC817K25E6327HTSA1 Small Signal Bipolar Junction Transistor. This NPN transistor is a game-changer in the world of amplifiers, offering unparalleled performance and reliability. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 160, this transistor is ideal for a wide range of applications. Its compact size and surface mount capability make it perfect for space-constrained projects. Trust in the quality and expertise of Infineon Technologies to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and ensures the transistor is protected from external factors, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this transistor suitable for amplification applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance in amplification tasks.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic designs.

Package Shape: RECTANGULAR

The rectangular shape enables a compact design and efficient use of space in electronic circuits.

Terminal Form: GULL WING

The gull wing terminal form provides a secure connection and ease of soldering on PCBs, ensuring reliable performance.

No. of Terminals: 3

With three terminals, the transistor is simple to connect and integrate into circuits, facilitating the design process.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, allowing for compact and efficient electronic designs.

Minimum DC Current Gain (hFE): 160

A high minimum DC current gain ensures consistent and reliable amplification performance in various operating conditions.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating provides flexibility and reliability in various voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency in electronic circuits, making them a preferred choice for various applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate power loads in electronic circuits.

Terminal Finish: TIN

The tin terminal finish provides a reliable and corrosion-resistant connection, ensuring long-term performance and stability.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for easy connection to other components.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures high reliability and quality, making this transistor suitable for automotive and other demanding applications.

Nominal Transition Frequency (fT): 170 MHz

The high nominal transition frequency indicates fast response times and efficient signal processing, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817K25E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC817K25E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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