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BCR183E6433HTMA1

Infineon Technologies

BCR183E6433HTMA1 by Infineon Technologies

Infineon's BCR183E6433HTMA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 200MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 86,452 parts In-Stock

1+ parts

-

100+ parts

$0.061

1k+ parts

$0.050

10k+ parts

$0.045

86,452

-

$0.061

$0.050

$0.045

Verical

USA . 86,452 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.056

86,452

-

-

-

$0.056

Arrow

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.053

30,000

-

-

-

$0.053

EBV Elektronik

Germany . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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20,000

-

-

-

-

Chip1Stop

Japan . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.034

10,000

-

-

-

$0.034

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 331 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

-

10k+ parts

-

331

$0.028

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.059

100+ parts

-

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-

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100

$0.059

-

-

-

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.118

20,000

-

-

-

$0.118

Vyrian

USA . 6,948 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,948

-

-

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VNN

France . 4,811 parts In-Stock

1+ parts

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4,811

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 48,494 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

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48,494

$0.025

-

-

-

Corphita

USA . 237 parts In-Stock

1+ parts

$0.027

100+ parts

-

1k+ parts

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237

$0.027

-

-

-

Component Stockers USA

USA . 63,883 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.030

10k+ parts

$0.030

63,883

$0.040

$0.040

$0.030

$0.030

Continental Prestige Electronics

USA . 1,177 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

$0.058

1,177

$0.059

-

-

$0.058

Argo Parts USA

USA . 1,171 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

1,171

$0.059

-

-

$0.057

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.059

100+ parts

$0.058

1k+ parts

-

10k+ parts

-

100

$0.059

$0.058

-

-

Modulus Dynamics

Lithuania . 6,682 parts In-Stock

1+ parts

$0.817

100+ parts

$0.784

1k+ parts

$0.752

10k+ parts

-

6,682

$0.817

$0.784

$0.752

-

AZTECH Wire

Italy . 664 parts In-Stock

1+ parts

$11.180

100+ parts

-

1k+ parts

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10k+ parts

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664

$11.180

-

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QUARKTWIN TECHNOLOGY LTD

USA . 19,472 parts In-Stock

1+ parts

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19,472

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Perfect Parts

USA . 11,200 parts In-Stock

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11,200

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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7,000

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Microchip USA

USA . 110 parts In-Stock

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110

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Overview

Upgrade your electronic devices with the BCR183E6433HTMA1 by Infineon Technologies. This high-quality Small Signal Bipolar Junction Transistor (BJT) is designed for switching applications, offering reliable performance and durability. With a PNP polarity and a built-in resistor configuration, this transistor is perfect for a wide range of projects. Its compact package shape and surface mount feature make it easy to integrate into any design. Trust Infineon Technologies for superior products that deliver value and efficiency. Choose the BCR183E6433HTMA1 for your next project and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by including a built-in resistor, saving space and reducing component count.

Transistor Application: SWITCHING

Designed for efficient switching applications, ensuring reliable performance.

Surface Mount: YES

Easily mountable on PCBs, saving assembly time and space.

Package Shape: RECTANGULAR

Facilitates easy placement on the PCB and efficient use of space.

Terminal Form: GULL WING

Provides secure and reliable soldering connections on the PCB.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB and allows for high-density mounting.

Minimum DC Current Gain (hFE): 30

Ensures stable and predictable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications.

Transistor Element Material: SILICON

High-performance material that ensures reliable and efficient transistor operation.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for many applications.

Terminal Position: DUAL

Provides flexibility in circuit connections and layouts.

Nominal Transition Frequency (fT): 200 MHz

High frequency capability allows for fast switching speeds and high-performance applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR183E6433HTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR183E6433HTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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