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2SC536NF-NPA-AT

Onsemi

2SC536NF-NPA-AT by Onsemi

2SC536NF-NPA-AT by Onsemi is a NPN BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Packaged in a cylindrical shape with through-hole terminals for easy installation.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 434,069 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

434,069

-

$0.053

$0.044

$0.039

DigiKey

USA . 434,069 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

434,069

-

-

-

$0.070

Verical

USA . 386,069 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.049

386,069

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,272 parts In-Stock

1+ parts

$0.041

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-

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1,272

$0.041

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Chip Stock

USA . 51,000 parts In-Stock

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51,000

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Vyrian

USA . 11,548 parts In-Stock

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11,548

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,177 parts In-Stock

1+ parts

$0.039

100+ parts

-

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1,177

$0.039

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-

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Corohmni

South Africa . 158 parts In-Stock

1+ parts

$0.043

100+ parts

-

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158

$0.043

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AZTECH Wire

Italy . 363 parts In-Stock

1+ parts

$14.230

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363

$14.230

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Native Components

USA . 659 parts In-Stock

1+ parts

$42.460

100+ parts

-

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$40.762

659

$42.460

-

-

$40.762

Northwest PG Solutions

USA . 1,584 parts In-Stock

1+ parts

$46.706

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-

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1,584

$46.706

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Continental Prestige Electronics

USA . 438,069 parts In-Stock

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100+ parts

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$0.039

10k+ parts

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438,069

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$0.039

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QUARKTWIN TECHNOLOGY LTD

USA . 20,731 parts In-Stock

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20,731

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Kulean Microsystems

USA . 6,526 parts In-Stock

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6,526

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Problanco Electronics

Mexico . 4,000 parts In-Stock

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4,000

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TANS Electronics

Latvia . 3,587 parts In-Stock

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3,587

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SupplyDigital Components

Austria . 3,361 parts In-Stock

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3,361

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Assy Fe

Spain . 1,805 parts In-Stock

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Kepictronics

USA . 1,500 parts In-Stock

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1,500

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Metaverse IC Inc.

Canada . 1,500 parts In-Stock

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1,500

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Perfect Parts

USA . 1,231 parts In-Stock

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1,231

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$1.998

1k+ parts

$1.850

10k+ parts

$1.850

500

-

$1.998

$1.850

$1.850

UHIMA Technologies

Türkiye . 220 parts In-Stock

1+ parts

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220

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Overview

Unlock the power of high-performance amplification with the Onsemi 2SC536NF-NPA-AT Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers unparalleled quality and reliability for a variety of amplifier applications. Its high DC current gain and maximum collector-emitter voltage of 50V ensure optimal performance, while the tin terminal finish and bottom position make installation a breeze. Trust Onsemi to deliver cutting-edge technology that meets your needs with precision and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection against environmental factors and ensures durability.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications in electronic circuits.

Configuration: SINGLE

Simplified design with one transistor in a single package for ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance.

Package Shape: ROUND

Compact design that can fit well in a variety of circuit layouts.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards, providing a secure connection.

No. of Terminals: 3

Sufficient number of terminals for proper connection and functionality.

Maximum Collector-Emitter Voltage: 50 V

Allows for higher voltage operation without risk of damage.

Nominal Transition Frequency (fT): 200 MHz

Ability to handle high frequency signals for fast and accurate amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC536NF-NPA-AT attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC536NF-NPA-AT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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