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BCW60BE6327HTSA1

Infineon Technologies

BCW60BE6327HTSA1 by Infineon Technologies

Infineon BCW60BE6327HTSA1 is a NPN BJT transistor with hFE of 70, VCE of 32V, and fT of 250MHz. Ideal for switching applications due to its small outline package style and Gull Wing terminals. Suitable for surface mount designs requiring low collector current (0.1A).

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 52,896 parts In-Stock

1+ parts

-

100+ parts

$0.048

1k+ parts

$0.040

10k+ parts

$0.035

52,896

-

$0.048

$0.040

$0.035

Verical

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.044

21,000

-

-

-

$0.044

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 197 parts In-Stock

1+ parts

$0.037

100+ parts

-

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-

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-

197

$0.037

-

-

-

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.059

100+ parts

-

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-

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650

$0.059

-

-

-

Chip Stock

USA . 122,446 parts In-Stock

1+ parts

-

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-

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122,446

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Vyrian

USA . 11,614 parts In-Stock

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11,614

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VNN

France . 3,427 parts In-Stock

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-

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3,427

-

-

-

-

TME

Poland . 3,094 parts In-Stock

1+ parts

-

100+ parts

$0.023

1k+ parts

-

10k+ parts

-

3,094

-

$0.023

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 49,808 parts In-Stock

1+ parts

$0.033

100+ parts

-

1k+ parts

-

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-

49,808

$0.033

-

-

-

Corphita

USA . 156 parts In-Stock

1+ parts

$0.035

100+ parts

-

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156

$0.035

-

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Argo Parts USA

USA . 2,071 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

2,071

$0.059

-

-

$0.057

Continental Prestige Electronics

USA . 1,734 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

$0.058

1,734

$0.059

-

-

$0.058

Modulus Dynamics

Lithuania . 11,278 parts In-Stock

1+ parts

$0.907

100+ parts

$0.871

1k+ parts

$0.834

10k+ parts

-

11,278

$0.907

$0.871

$0.834

-

AZTECH Wire

Italy . 165 parts In-Stock

1+ parts

$18.440

100+ parts

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165

$18.440

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Perfect Parts

USA . 57,120 parts In-Stock

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57,120

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QUARKTWIN TECHNOLOGY LTD

USA . 14,078 parts In-Stock

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14,078

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.058

1k+ parts

$0.056

10k+ parts

$0.055

100

-

$0.058

$0.056

$0.055

Overview

Unlock the power of innovation with the BCW60BE6327HTSA1 from Infineon Technologies. Designed with precision and quality in mind, this Small Signal Bipolar Junction Transistor is perfect for a wide range of switching applications. With its NPN configuration and maximum collector-emitter voltage of 32V, this transistor offers reliability and efficiency like no other. Say goodbye to compromise and hello to superior performance with the BCW60BE6327HTSA1. Elevate your projects today with this cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, offering versatility.

Configuration: SINGLE

Simplifies circuit design and ensures easy integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Enables easy PCB assembly and saves space, ideal for compact electronic devices.

Package Shape: RECTANGULAR

Facilitates efficient placement on PCBs and space-saving designs.

Terminal Form: GULL WING

Allows for easy soldering and secure connections, enhancing reliability.

No. of Terminals: 3

Simplified connections and reduced chance of errors in circuit layout and assembly.

Package Style (Meter): SMALL OUTLINE

Compact size suitable for small electronic devices and space-constrained applications.

Minimum DC Current Gain (hFE): 70

Ensures consistent and reliable amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 32 V

A high voltage rating allows for use in a wide range of applications, providing versatility.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its performance and reliability in transistors.

Maximum Collector Current (IC): 0.1 A

Sufficient current handling capability for many low-power switching applications.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Allows for flexibility in circuit layout and design, accommodating various PCB configurations.

Nominal Transition Frequency (fT): 250 MHz

Provides high-frequency performance suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW60BE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCW60BE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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