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BCW60-B

Infineon Technologies

BCW60-B by Infineon Technologies

Infineon Technologies' BCW60-B is a NPN BJT transistor with hFE of 70, VCE of 32V, and fT of 250MHz. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.010

Lifecycle Status

EOL

Suppliers In-Stock

24

In-Stock Inventory

1k+

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Rochester

USA . 7,000 parts In-Stock

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Digiode

USA . 6,737 parts In-Stock

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TEDSS.com

USA . 1,340 parts In-Stock

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LWI Electronics Inc

India . 11,675 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Corel Iberica Componentes, S.L.

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J2 Sourcing AB

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Vyrian

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Pegasus Components GmbH

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VNN

France . 4,393 parts In-Stock

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Component Sense

UK . 3,033 parts In-Stock

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PC Components Company LLC

USA . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Greenchips

USA . 2,879 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 2,879 parts In-Stock

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Rebound Electronics

UK . 2,190 parts In-Stock

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Halfin

Belgium . 1,796 parts In-Stock

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Anansix

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ACDS - Activité Composants Distribution Service

France . 1,064 parts In-Stock

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Manotoh

Italy . 200 parts In-Stock

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Huijzer Components

Netherlands . 106 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 6,773 parts In-Stock

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$0.010

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Ampacity Inc.

Singapore . 6,761 parts In-Stock

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Corphita

USA . 7,770 parts In-Stock

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Corohmni

South Africa . 104 parts In-Stock

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Modulus Dynamics

Lithuania . 1,117 parts In-Stock

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IDEA Electronic Components Group

UK . 341 parts In-Stock

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$1.756

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341

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MKK Technologies

India . 1,866 parts In-Stock

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DigiPath Technology Company

USA . 1,866 parts In-Stock

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Component Stockers USA

USA . 598 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 23,279 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,128 parts In-Stock

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Lixinc

USA . 19,023 parts In-Stock

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Assy Fe

Spain . 11,570 parts In-Stock

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XL Components Corporation

Australia . 8,077 parts In-Stock

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Continental Prestige Electronics

USA . 7,755 parts In-Stock

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Kulean Microsystems

USA . 5,834 parts In-Stock

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Problanco Electronics

Mexico . 5,404 parts In-Stock

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Marpe Global Electronics

Taiwan . 5,164 parts In-Stock

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Argo Parts USA

USA . 4,886 parts In-Stock

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Microchip USA

USA . 4,647 parts In-Stock

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QualityLine Systems

Poland . 4,445 parts In-Stock

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UNI Independent Distributors

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SupplyDigital Components

Austria . 4,255 parts In-Stock

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Supply Digital

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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TANS Electronics

Latvia . 3,676 parts In-Stock

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Perfect Parts

USA . 3,097 parts In-Stock

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Computer Components Inc. - USA

USA . 2,251 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,064 parts In-Stock

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Parana Technologies

USA . 886 parts In-Stock

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$2.100

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886

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UHIMA Technologies

Türkiye . 175 parts In-Stock

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Bastille Electronics

Australia . 148 parts In-Stock

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Overview

Upgrade your electronic projects with the BCW60-B by Infineon Technologies, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for amplifier applications. Manufactured with precision and expertise, this NPN transistor offers exceptional performance and reliability. Its compact size, surface mount capability, and high DC current gain make it perfect for a wide range of applications. Experience superior quality and value with the BCW60-B, the ideal choice for amplification needs in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in this type of circuit.

Surface Mount: YES

Allows for easy and compact PCB assembly, making it suitable for space-constrained applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on a PCB, improving the overall convenience of using this transistor.

Terminal Form: GULL WING

Provides a stable and secure connection, enhancing the reliability of the transistor in a circuit.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity, making it easier to integrate into a circuit.

Package Style (Meter): SMALL OUTLINE

Compact size allows for efficient use of space on a PCB, making it ideal for small electronic devices.

Minimum DC Current Gain (hFE): 70

Ensures consistent and reliable amplification performance in various circuit configurations.

Maximum Collector-Emitter Voltage: 32 V

Provides a high voltage rating, allowing for a wide range of applications and operating conditions.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance and reliability, making this product a high-quality choice.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for low to medium power applications.

Terminal Finish: MATTE TIN

Provides a durable and reliable terminal finish, ensuring long-term performance in various operating environments.

Terminal Position: DUAL

Dual terminal position allows for flexible installation and connection options, enhancing versatility in circuit design.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency enables high-frequency amplification, making this transistor suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW60-B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCW60-B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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