Loading...

BCX41E6433HTMA1

Infineon Technologies

BCX41E6433HTMA1 by Infineon Technologies

BCX41E6433HTMA1 by Infineon Technologies is a NPN BJT transistor with hFE of 40, VCE of 125V, and IC of 0.8A. It is used for switching applications in surface mount designs due to its small outline package style and high transition frequency of 100MHz.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 140,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.076

140,000

-

-

-

$0.076

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,017 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,017

-

-

-

-

VNN

France . 1,230 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,230

-

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Digiode

USA . 54 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

54

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 9,951 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

-

10k+ parts

-

9,951

$0.050

-

-

-

Modulus Dynamics

Lithuania . 7,721 parts In-Stock

1+ parts

$0.741

100+ parts

$0.711

1k+ parts

$0.682

10k+ parts

-

7,721

$0.741

$0.711

$0.682

-

Component Stockers USA

USA . 70,000 parts In-Stock

1+ parts

$1.120

100+ parts

-

1k+ parts

-

10k+ parts

-

70,000

$1.120

-

-

-

AZTECH Wire

Italy . 63 parts In-Stock

1+ parts

$17.850

100+ parts

-

1k+ parts

-

10k+ parts

-

63

$17.850

-

-

-

Corphita

USA . 921 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

921

-

-

-

-

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

300

-

-

-

-

Overview

Unlock the potential of your electronic projects with the BCX41E6433HTMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers high-quality Small Signal Bipolar Junction Transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 125V and a minimum DC current gain of 40, this NPN transistor offers reliable performance and efficiency. Whether you’re a DIY enthusiast or a professional electronics engineer, the BCX41E6433HTMA1 provides the value, benefits, and advantages you need to take your projects to the next level. Elevate your designs with Infineon Technologies today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This makes the product lightweight and durable, ideal for portable or long-lasting electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Having a single configuration simplifies circuit design and assembly, saving time and effort during production.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in on/off circuits.

Surface Mount: YES

Being surface mount compatible allows for easy integration onto PCBs, making this product suitable for compact designs and mass production.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor for easy PCB layout and component placement, ensuring compatibility with existing designs.

Terminal Form: GULL WING

The gull wing terminal form offers secure soldering connections and improved heat dissipation, enhancing the reliability and longevity of the product.

No. of Terminals: 3

With three terminals, this transistor simplifies circuit connections and reduces the chance of wiring errors, ensuring smooth operation in electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs, making it suitable for compact electronic devices with limited board real estate.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures consistent and stable amplification in low-power applications, improving signal integrity and overall performance.

Maximum Collector-Emitter Voltage: 125 V

With a high maximum voltage rating, this transistor can withstand higher voltage levels, making it suitable for applications that require robust and reliable circuit protection.

Transistor Element Material: SILICON

Silicon transistors offer high thermal stability and low leakage currents, ensuring reliable performance even in challenging operating conditions.

Maximum Collector Current (IC): 0.8 A

With a maximum collector current of 0.8 A, this transistor can handle moderate power levels, making it suitable for a wide range of circuit applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layout and minimizes interference between neighboring components, ensuring optimal performance in crowded PCBs.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates fast switching speeds and excellent high-frequency performance, making this product ideal for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX41E6433HTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX41E6433HTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 18