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BCX42E6327HTSA1

Infineon Technologies

BCX42E6327HTSA1 by Infineon Technologies

BCX42E6327HTSA1 by Infineon is a PNP BJT transistor for switching applications. With hFE of 40, it operates at max 150°C and handles up to 0.8A collector current. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.

Median Price

$0.334

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 116 parts In-Stock

1+ parts

$0.580

100+ parts

$0.258

1k+ parts

$0.142

10k+ parts

$0.124

116

$0.580

$0.258

$0.142

$0.124

Arrow

USA . 18,000 parts In-Stock

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Verical

USA . 12,000 parts In-Stock

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12,000

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DigiKey

USA . 5,162 parts In-Stock

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$0.087

5,162

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$0.087

Distributors (In-Stock)

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Nova Conductors

Japan . 57 parts In-Stock

1+ parts

$0.137

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57

$0.137

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Digiode

USA . 934 parts In-Stock

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$0.361

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934

$0.361

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Vyrian

USA . 235,199 parts In-Stock

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235,199

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Chip Stock

USA . 19,100 parts In-Stock

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Rutronik

Germany . 12,000 parts In-Stock

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$0.063

12,000

-

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$0.063

Schukat

Germany . 11,900 parts In-Stock

1+ parts

-

100+ parts

$0.117

1k+ parts

$0.088

10k+ parts

$0.070

11,900

-

$0.117

$0.088

$0.070

Partservice

France . 6,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.082

10k+ parts

$0.077

6,000

-

-

$0.082

$0.077

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.274

6,000

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$0.274

Micros sp.j. W. Kędra i J. Lic

Poland . 5,000 parts In-Stock

1+ parts

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100+ parts

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$0.088

10k+ parts

$0.082

5,000

-

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$0.088

$0.082

Cogito LLC

Ukraine . 3,000 parts In-Stock

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3,000

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Micros

Poland . 3,000 parts In-Stock

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$0.080

3,000

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$0.080

Euro-Tech

UK . 2,750 parts In-Stock

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2,750

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TME

Poland . 1,058 parts In-Stock

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$0.092

10k+ parts

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1,058

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$0.092

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VNN

France . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 174,140 parts In-Stock

1+ parts

$0.049

100+ parts

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174,140

$0.049

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Semicontronic

India . 173,942 parts In-Stock

1+ parts

$0.049

100+ parts

$0.048

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$0.048

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173,942

$0.049

$0.048

$0.048

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.134

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$0.129

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1,000

$0.134

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$0.129

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Continental Prestige Electronics

USA . 5,222 parts In-Stock

1+ parts

$0.137

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$0.134

5,222

$0.137

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$0.134

Argo Parts USA

USA . 1 parts In-Stock

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$0.137

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$0.133

1

$0.137

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$0.133

Corphita

USA . 952 parts In-Stock

1+ parts

$0.342

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952

$0.342

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Corohmni

South Africa . 289 parts In-Stock

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$0.348

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289

$0.348

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Aztec Data Supply Inc.

USA . 315 parts In-Stock

1+ parts

$1.722

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315

$1.722

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Modulus Dynamics

Lithuania . 5,727 parts In-Stock

1+ parts

$1.782

100+ parts

$1.711

1k+ parts

$1.639

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5,727

$1.782

$1.711

$1.639

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Eastek

USA . 108,000 parts In-Stock

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Perfect Parts

USA . 60,048 parts In-Stock

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RC Electronics

USA . 50,000 parts In-Stock

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$0.140

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$0.130

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$0.120

50,000

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$0.140

$0.130

$0.120

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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QUARKTWIN TECHNOLOGY LTD

USA . 2,686 parts In-Stock

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2,686

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Overview

Enhance your electronic projects with the BCX42E6327HTSA1 by Infineon Technologies. Manufactured with precision and quality in mind, this small signal bipolar junction transistor (BJT) offers a multitude of applications in switching scenarios. Its PNP polarity and single configuration make it a versatile choice for various projects. With a high DC current gain of 40 and a maximum collector-emitter voltage of 125V, this transistor provides reliable performance. Trust in the expertise of Infineon Technologies and experience the value and benefits that the BCX42E6327HTSA1 brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, enhancing its durability and reliability.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits and applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and low saturation voltage.

Surface Mount: YES

Enables easy and efficient mounting on PCBs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Facilitates easier handling and placement during assembly.

Terminal Form: GULL WING

Provides a secure and stable connection, reducing the risk of disconnection.

No. of Terminals: 3

Simplifies circuit connections and reduces the chances of error.

Package Style (Meter): SMALL OUTLINE

Occupies less space on the PCB, allowing for compact and efficient designs.

Minimum DC Current Gain (hFE): 40

Ensures reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 125 V

Allows for the handling of higher voltages, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Offers excellent performance characteristics and reliability.

Maximum Collector Current (IC): 0.8 A

Capable of handling relatively high currents, making it suitable for a variety of applications.

Terminal Finish: TIN

Provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Facilitates easy and secure connections in the circuit.

Nominal Transition Frequency (fT): 150 MHz

Indicates the speed at which the transistor can switch states, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX42E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX42E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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