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BCX41E6327

Infineon Technologies

BCX41E6327 by Infineon Technologies

BCX41E6327 by Infineon is a NPN BJT transistor with hFE of 40 and VCE of 125V. Ideal for switching applications, it has IC of 0.8A and fT of 100MHz. Its GULL WING terminals make it suitable for surface mount in small outline packages.

Median Price

$0.530

Lifecycle Status

EOL

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,443 parts In-Stock

1+ parts

$0.530

100+ parts

$0.231

1k+ parts

$0.127

10k+ parts

$0.072

1,443

$0.530

$0.231

$0.127

$0.072

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 255 parts In-Stock

1+ parts

$0.340

100+ parts

$0.242

1k+ parts

$0.105

10k+ parts

$0.070

255

$0.340

$0.242

$0.105

$0.070

Digiode

USA . 494 parts In-Stock

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$0.418

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494

$0.418

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Bristol Electronics

USA . 2,915 parts In-Stock

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$0.450

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$0.225

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$0.090

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2,915

$0.450

$0.225

$0.090

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Rutronik

Germany . 39,000 parts In-Stock

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$0.091

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$0.091

ComSIT Distribution GmbH

Germany . 23,225 parts In-Stock

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ComSIT USA

USA . 23,225 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 12,106 parts In-Stock

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Dan-Mar Components

USA . 6,000 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 5,064 parts In-Stock

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LWI Electronics Inc

India . 4,450 parts In-Stock

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4,450

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Pegasus Components GmbH

Germany . 3,000 parts In-Stock

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Micros

Poland . 3,000 parts In-Stock

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$0.141

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3,000

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Partservice

France . 3,000 parts In-Stock

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$0.098

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$0.098

3,000

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$0.098

$0.098

ACDS - Activité Composants Distribution Service

France . 2,950 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,950 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,408 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 2,164 parts In-Stock

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$0.105

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$0.105

2,164

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$0.105

$0.105

Cogito LLC

Ukraine . 2,075 parts In-Stock

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VNN

France . 1,797 parts In-Stock

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Vyrian

USA . 1,584 parts In-Stock

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Tectiva GmbH

Germany . 980 parts In-Stock

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980

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EMSNET

USA . 750 parts In-Stock

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750

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Nova Conductors

Japan . 150 parts In-Stock

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150

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NexGen Digital

USA . 25 parts In-Stock

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25

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Distributors (Availability)

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Semicontronic

India . 4,973 parts In-Stock

1+ parts

$0.374

100+ parts

$0.365

1k+ parts

$0.363

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4,973

$0.374

$0.365

$0.363

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Ampacity Inc.

Singapore . 1,856 parts In-Stock

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$0.374

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Corphita

USA . 701 parts In-Stock

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$0.396

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701

$0.396

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Corohmni

South Africa . 767 parts In-Stock

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$0.654

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$0.654

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Modulus Dynamics

Lithuania . 21,766 parts In-Stock

1+ parts

$1.107

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$1.063

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$1.018

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21,766

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$1.018

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Andel Nordic

Denmark . 111 parts In-Stock

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$34.350

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$24.047

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$24.047

111

$34.350

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$24.047

$24.047

Perfect Parts

USA . 1,022,376 parts In-Stock

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Kepictronics

USA . 54,013 parts In-Stock

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A-Z Elektronik GmbH

Germany . 19,544 parts In-Stock

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Assy Fe

Spain . 13,184 parts In-Stock

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Lixinc

USA . 6,265 parts In-Stock

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Futuretech Components

Singapore . 6,000 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Continental Prestige Electronics

USA . 3,790 parts In-Stock

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Argo Parts USA

USA . 3,061 parts In-Stock

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Metaverse IC Inc.

Canada . 2,970 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,396 parts In-Stock

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1,396

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Overview

Elevate your electronic designs with the BCX41E6327 by Infineon Technologies, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured with precision and expertise, this NPN transistor offers exceptional performance and reliability. With a maximum collector-emitter voltage of 125V and a minimum DC current gain of 40, this component delivers optimal functionality. Its compact package shape and surface mount design make it ideal for various projects. Trust in Infineon's reputation for excellence and choose the BCX41E6327 for your next innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design by requiring only one transistor for the specified application.

Transistor Application: SWITCHING

Optimized for high-speed switching applications, making it suitable for a wide range of electronics.

Surface Mount: YES

Allows for easy mounting on circuit boards, saving space and simplifying assembly.

Terminal Form: GULL WING

Enables easy soldering and secure connection to the circuit board.

No. of Terminals: 3

Simple layout with only 3 terminals for easy integration into circuit designs.

Minimum DC Current Gain (hFE): 40

Provides consistent amplification of the input signal for reliable performance.

Maximum Collector-Emitter Voltage: 125 V

Allows for operation in a wide range of voltage conditions, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon is a reliable and commonly used material for transistors, ensuring stable performance.

Maximum Collector Current (IC): 0.8 A

Capable of handling relatively high currents, suitable for many electronic applications.

Terminal Finish: TIN

Provides a good soldering surface, ensuring a strong connection to the circuit board.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connection.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable soldering during assembly.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX41E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX41E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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