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BCX41QTA

Diodes Incorporated

BCX41QTA by Diodes Incorporated

Diodes Inc.'s BCX41QTA is a NPN BJT transistor with hFE of 40, VCE of 125V, and IC of 0.8A. It is ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and fT of 100MHz. The package is surface mountable with GULL WING terminals in a RECTANGULAR shape.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 96,000 parts In-Stock

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$0.064

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$0.064

Arrow

USA . 21,000 parts In-Stock

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$0.072

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$0.072

Avnet

USA . 6,000 parts In-Stock

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DigiKey

USA . 1,700 parts In-Stock

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$0.088

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$0.088

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Chip Stock

USA . 64,000 parts In-Stock

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Vyrian

USA . 31,223 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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6,000

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VNN

France . 100 parts In-Stock

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100

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Ampacity Inc.

Singapore . 31,406 parts In-Stock

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$0.054

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31,406

$0.054

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Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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Eastek

USA . 6,000 parts In-Stock

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$0.090

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$0.090

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Continental Prestige Electronics

USA . 1,047 parts In-Stock

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1,047

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Argo Parts USA

USA . 1,022 parts In-Stock

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Bastille Electronics

Australia . 650 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the BCX41QTA by Diodes Incorporated. Known for their top-notch quality and reliability, Diodes Incorporated offers small signal bipolar junction transistors that are perfect for a wide range of applications. Whether you're working on automotive electronics, industrial controls, or consumer electronics, this NPN transistor with a minimum DC current gain of 40 and maximum collector-emitter voltage of 125V delivers exceptional results. Trust in Diodes Incorporated to provide you with a durable and efficient solution that will elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, making this product versatile.

Configuration: SINGLE

Simplifies circuit design and enhances reliability by having a single transistor configuration.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and space.

Minimum DC Current Gain (hFE): 40

Ensures reliable and consistent performance in amplification applications.

Maximum Collector-Emitter Voltage: 125 V

Can handle higher voltage levels, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer high performance and efficiency, making them suitable for a wide range of applications.

Maximum Collector Current (IC): 0.8 A

Capable of handling moderate current levels, making it suitable for various electronic circuits.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering processes, ensuring reliability in manufacturing.

Nominal Transition Frequency (fT): 100 MHz

Provides high-frequency performance, making it suitable for amplification in audio and RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX41QTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX41QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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