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BCX41

Diodes Incorporated

BCX41 by Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Package Body Material: PLASTIC/EPOXY;

Median Price

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Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 5,660 parts In-Stock

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5,660

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LIBRA Elektronik GmbH

Germany . 4,877 parts In-Stock

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4,877

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Ack Elektronik San.Tic.Ltd.Sti

. 2,800 parts In-Stock

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2,800

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Pegasus Components GmbH

Germany . 2,060 parts In-Stock

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2,060

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Fibra_Brandt Electronic GMBH

Germany . 1,000 parts In-Stock

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1,000

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Halfin

Belgium . 895 parts In-Stock

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895

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Digiode

USA . 682 parts In-Stock

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682

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ComSIT Distribution GmbH

Germany . 500 parts In-Stock

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500

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Vyrian

USA . 453 parts In-Stock

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453

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LittleDiode

UK . 138 parts In-Stock

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138

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LWI Electronics Inc

India . 80 parts In-Stock

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80

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Huijzer Components

Netherlands . 71 parts In-Stock

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71

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GES GmbH

Germany . 49 parts In-Stock

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49

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Manotoh

Italy . 22 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 1,434 parts In-Stock

1+ parts

$0.432

100+ parts

$0.415

1k+ parts

$0.397

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1,434

$0.432

$0.415

$0.397

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AZTECH Wire

Italy . 454 parts In-Stock

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$7.140

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454

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Lixinc

USA . 10,370 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,200 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Corphita

USA . 277 parts In-Stock

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277

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Bastille Electronics

Australia . 200 parts In-Stock

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200

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Assy Fe

Spain . 55 parts In-Stock

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55

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX41 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX41 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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