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BCX42E6433HTMA1

Infineon Technologies

BCX42E6433HTMA1 by Infineon Technologies

Infineon BCX42E6433HTMA1 is a PNP BJT transistor for switching applications. Features include hFE of 40, VCE of 125V, and IC of 0.8A. With a fT of 150MHz, it's ideal for small outline surface mount designs requiring high-speed switching capabilities.

Median Price

$0.074

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.079

60,000

-

-

-

$0.079

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.070

1k+ parts

$0.058

10k+ parts

$0.052

10,000

-

$0.070

$0.058

$0.052

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 346 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

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346

$0.055

-

-

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Nova Conductors

Japan . 67 parts In-Stock

1+ parts

$0.137

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67

$0.137

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Chip Stock

USA . 19,500 parts In-Stock

1+ parts

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19,500

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Vyrian

USA . 6,342 parts In-Stock

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6,342

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VNN

France . 870 parts In-Stock

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870

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Distributors (Availability)

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Ampacity Inc.

Singapore . 74,806 parts In-Stock

1+ parts

$0.049

100+ parts

-

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-

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-

74,806

$0.049

-

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Corphita

USA . 325 parts In-Stock

1+ parts

$0.052

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-

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325

$0.052

-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.137

100+ parts

-

1k+ parts

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2,000

$0.137

-

-

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Continental Prestige Electronics

USA . 1,250 parts In-Stock

1+ parts

$0.137

100+ parts

-

1k+ parts

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10k+ parts

$0.134

1,250

$0.137

-

-

$0.134

Argo Parts USA

USA . 184 parts In-Stock

1+ parts

$0.137

100+ parts

-

1k+ parts

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10k+ parts

$0.133

184

$0.137

-

-

$0.133

Corohmni

South Africa . 531 parts In-Stock

1+ parts

$0.423

100+ parts

-

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531

$0.423

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Modulus Dynamics

Lithuania . 21,698 parts In-Stock

1+ parts

$1.427

100+ parts

$1.370

1k+ parts

$1.313

10k+ parts

-

21,698

$1.427

$1.370

$1.313

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Aztec Data Supply Inc.

USA . 239 parts In-Stock

1+ parts

$1.625

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239

$1.625

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AZTECH Wire

Italy . 281 parts In-Stock

1+ parts

$11.680

100+ parts

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281

$11.680

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A-Z Elektronik GmbH

Germany . 15,000 parts In-Stock

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100+ parts

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15,000

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QUARKTWIN TECHNOLOGY LTD

USA . 7,280 parts In-Stock

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7,280

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Overview

Unlock the power of reliable and efficient switching with the BCX42E6433HTMA1 by Infineon Technologies. As a leader in small signal bipolar junction transistors, Infineon delivers top-notch quality and performance in every product. Whether you're looking for a durable solution for your electronic applications or seeking to enhance the functionality of your devices, this PNP transistor offers exceptional value, benefits, and advantages to customers. Trust in Infineon to provide the cutting-edge technology you need to succeed in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good protection and durability for the transistor, making it reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power switching applications, making this transistor suitable for a variety of electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to integrate this transistor into projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers efficient performance in turning on/off circuits rapidly.

Surface Mount: YES

Surface mount capability allows for easy and convenient PCB mounting, saving space and improving overall circuit layout.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement on a PCB, maximizing space utilization and minimizing interference with other components.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide secure connection to the PCB for reliable operation.

No. of Terminals: 3

With three terminals, this transistor can be easily connected in a circuit for accurate control and signal processing.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers compact size and lightweight design, ideal for portable and space-constrained applications.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain of 40 ensures stable amplification of input signals, resulting in consistent and reliable performance.

Maximum Collector-Emitter Voltage: 125 V

High maximum collector-emitter voltage of 125 V allows for operation in a wide range of voltage conditions with added safety margin.

Transistor Element Material: SILICON

Silicon material offers excellent thermal and electrical properties, ensuring high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.8 A

High maximum collector current of 0.8 A enables handling of moderate power levels, making this transistor suitable for a wide range of applications.

Terminal Position: DUAL

Dual terminal position allows for easy and flexible connection in a circuit, offering versatility in circuit design and implementation.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency of 150 MHz indicates fast switching speed and optimal performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX42E6433HTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX42E6433HTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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