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BCX41

Infineon Technologies

BCX41 by Infineon Technologies

BCX41 by Infineon Technologies is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.35W, hFE of 40, and operates at up to 150°C. Ideal for small outline packages requiring high collector-emitter voltage and current capabilities.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

15

In-Stock Inventory

1k+

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ACDS - Activité Composants Distribution Service

France . 5,660 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 4,877 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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Pegasus Components GmbH

Germany . 2,060 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 1,000 parts In-Stock

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Halfin

Belgium . 895 parts In-Stock

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Digiode

USA . 682 parts In-Stock

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ComSIT Distribution GmbH

Germany . 500 parts In-Stock

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Vyrian

USA . 453 parts In-Stock

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LittleDiode

UK . 138 parts In-Stock

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LWI Electronics Inc

India . 80 parts In-Stock

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Huijzer Components

Netherlands . 71 parts In-Stock

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GES GmbH

Germany . 49 parts In-Stock

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Manotoh

Italy . 22 parts In-Stock

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Nova Conductors

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Modulus Dynamics

Lithuania . 1,434 parts In-Stock

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$0.415

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$0.397

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AZTECH Wire

Italy . 454 parts In-Stock

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Lixinc

USA . 10,370 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,200 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 277 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Assy Fe

Spain . 55 parts In-Stock

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Overview

Looking for a reliable solution for your switching applications? Look no further than the BCX41 by Infineon Technologies. This small signal bipolar junction transistor (BJT) offers high quality and performance, perfect for your electronic projects. With a maximum collector-emitter voltage of 125V and maximum collector current of 0.8A, this NPN transistor is designed to meet your needs. Its compact size and gull wing terminal form make it easy to integrate into your designs. Trust Infineon Technologies to deliver superior products like the BCX41 that provide value, efficiency, and reliability for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal stability and durability, making the transistor suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high current gain and fast switching speeds.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easy to use for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in circuits that require rapid on/off transitions.

Surface Mount: YES

Surface mount technology allows for compact and space-saving designs, making it ideal for modern electronics with limited space.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections, ensuring reliable electrical contact and mechanical stability.

No. of Terminals: 3

Three terminals provide essential connections for biasing and signal input/output, offering versatility in circuit design and functionality.

Maximum Power Dissipation (Abs): 0.35 W

With a high maximum power dissipation, the transistor can handle moderate power levels without overheating, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 indicates good amplification capability, allowing for efficient signal amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes the transistor suitable for industrial and automotive applications where elevated temperatures may be encountered.

Maximum Collector-Emitter Voltage: 125 V

With a high maximum collector-emitter voltage, the transistor can withstand higher voltage levels, offering robust protection against voltage spikes and surges.

Transistor Element Material: SILICON

Silicon transistors provide excellent performance characteristics, such as low leakage currents and high reliability, ensuring stable operation in various circuit conditions.

Maximum Collector Current (IC): 0.8 A

A high maximum collector current rating allows the transistor to handle relatively high currents, making it suitable for power applications where a large current flow is required.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides a reliable and corrosion-resistant surface for soldering, ensuring long-term electrical connectivity and stable performance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit board layout and soldering configuration, facilitating easy integration into various electronic systems.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the transistor can withstand the soldering process without damage, ensuring reliable and robust solder joints for long-term performance.

Nominal Transition Frequency (fT): 100 MHz

A high nominal transition frequency indicates fast switching speeds and good high-frequency performance, making the transistor suitable for applications requiring rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX41 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX41 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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