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BCX41TA

Diodes Incorporated

BCX41TA by Diodes Incorporated

BCX41TA by Diodes Inc. is a NPN BJT transistor with max VCEsat of 0.9V, hFE of 40, and fT of 100MHz. Ideal for small signal applications in electronics due to its low power dissipation, high collector-emitter voltage, and compact package style. Suitable for surface mount designs requiring a reliable and efficient transistor with a max operating temp of 150°C.

Median Price

$0.111

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 39 parts In-Stock

1+ parts

$0.072

100+ parts

$0.018

1k+ parts

-

10k+ parts

-

39

$0.072

$0.018

-

-

Verical

USA . 402,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.046

402,000

-

-

-

$0.046

Farnell

UK . 3,045 parts In-Stock

1+ parts

-

100+ parts

$0.111

1k+ parts

$0.082

10k+ parts

$0.070

3,045

-

$0.111

$0.082

$0.070

Element14

Singapore . 1,630 parts In-Stock

1+ parts

-

100+ parts

$0.123

1k+ parts

$0.089

10k+ parts

$0.087

1,630

-

$0.123

$0.089

$0.087

Newark

USA . 4 parts In-Stock

1+ parts

-

100+ parts

$0.139

1k+ parts

$0.092

10k+ parts

-

4

-

$0.139

$0.092

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

-

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10

$0.090

-

-

-

NAC Semi

USA . 147,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.086

147,000

-

-

-

$0.086

IBS Electronics

USA . 138,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

138,000

-

-

-

$0.052

Component Sense

UK . 58,757 parts In-Stock

1+ parts

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100+ parts

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58,757

-

-

-

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Vyrian

USA . 37,214 parts In-Stock

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37,214

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-

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,247 parts In-Stock

1+ parts

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5,247

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ComSIT Distribution GmbH

Germany . 5,018 parts In-Stock

1+ parts

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100+ parts

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5,018

-

-

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Sinequanon

UK . 2,550 parts In-Stock

1+ parts

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100+ parts

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2,550

-

-

-

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Zilex Electronics Inc.

Canada . 2,500 parts In-Stock

1+ parts

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100+ parts

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2,500

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 1,068 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

-

10k+ parts

$0.087

1,068

$0.090

-

-

$0.087

Continental Prestige Electronics

USA . 1,750 parts In-Stock

1+ parts

$0.408

100+ parts

$0.154

1k+ parts

$0.079

10k+ parts

$0.052

1,750

$0.408

$0.154

$0.079

$0.052

Corohmni

South Africa . 329 parts In-Stock

1+ parts

$1.691

100+ parts

-

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10k+ parts

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329

$1.691

-

-

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Modulus Dynamics

Lithuania . 17,870 parts In-Stock

1+ parts

$1.802

100+ parts

$1.802

1k+ parts

$1.802

10k+ parts

-

17,870

$1.802

$1.802

$1.802

-

Aztec Data Supply Inc.

USA . 222 parts In-Stock

1+ parts

$1.904

100+ parts

-

1k+ parts

-

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222

$1.904

-

-

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Eastek

USA . 102,000 parts In-Stock

1+ parts

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102,000

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Perfect Parts

USA . 37,890 parts In-Stock

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37,890

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.088

1k+ parts

$0.085

10k+ parts

$0.084

500

-

$0.088

$0.085

$0.084

Overview

Unleash the power of innovation with the BCX41TA by Diodes Incorporated. Crafted with precision and expertise, this NPN Small Signal Bipolar Junction Transistor is a game-changer in the world of electronics. Whether you're designing cutting-edge technology or seeking reliable performance, this transistor is your go-to solution. With a low VCEsat of 0.9V and maximum collector-emitter voltage of 125V, the BCX41TA offers unparalleled efficiency and durability. Elevate your projects and experience seamless functionality with this high-quality component from a trusted manufacturer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ensuring it can withstand various operating conditions.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration in circuits and compatibility with a wide range of electronic components.

Configuration: SINGLE

The single configuration simplifies circuit design and improves reliability by reducing potential points of failure.

Maximum VCEsat: 0.9 V

The low maximum VCEsat value of 0.9 V enhances the efficiency of the transistor by minimizing energy losses during operation.

Terminal Form: GULL WING

The gull wing terminal form provides easy and secure mounting on PCBs, making it suitable for surface mount applications.

Maximum Power Dissipation (Abs): 0.35 W

The low maximum power dissipation value of 0.35 W ensures the transistor can handle high power levels without overheating.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures consistent and reliable amplification of signals in various circuit configurations.

Maximum Collector-Emitter Voltage: 125 V

The high maximum collector-emitter voltage rating of 125 V allows for safe operation in high voltage applications.

Maximum Collector Current (IC): 0.8 A

The maximum collector current rating of 0.8 A enables the transistor to carry high currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates fast response times and high-speed switching capabilities of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX41TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

12 pF

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.9 V

Trade Compliance

BCX41TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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